A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

Maja Vidojkovic, Mihai Sanduleanu, Johan van der Tang, Peter Baltus, Arthur van Roermund

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

21 Citations (Scopus)
1 Downloads (Pure)

Abstract

This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

Original languageEnglish
Title of host publicationProceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages53-56
Number of pages4
ISBN (Print)1424405319, 9781424405312
DOIs
Publication statusPublished - 2 Oct 2007
Event2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007) - Honolulu, United States
Duration: 3 Jun 20075 Jun 2007

Conference

Conference2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007)
Abbreviated titleRFIC 2007
Country/TerritoryUnited States
CityHonolulu
Period3/06/075/06/07

Keywords

  • Broadband
  • Low noise amplifiers
  • Multi-band
  • Multimode

Fingerprint

Dive into the research topics of 'A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP'. Together they form a unique fingerprint.

Cite this