A 1.2V 10μW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3σ) from -70°C to 125°C

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, Salvatore Drago, Domine M.W. Leenaerts, Bram Nauta

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37 Citations (Scopus)

Abstract

This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from -70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim.

Original languageEnglish
Title of host publication2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages312-313
Number of pages2
ISBN (Electronic)978-1-4244-6036-6
ISBN (Print)978-1-4244-6033-5
DOIs
Publication statusPublished - 18 May 2010
Event2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, United States
Duration: 7 Feb 201011 Feb 2010

Conference

Conference2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
CountryUnited States
CitySan Francisco, CA
Period7/02/1011/02/10

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    Sebastiano, F., Breems, L. J., Makinwa, K. A. A., Drago, S., Leenaerts, D. M. W., & Nauta, B. (2010). A 1.2V 10μW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3σ) from -70°C to 125°C. In 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers (pp. 312-313). [5433895] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2010.5433895