A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines

C. Lu; Reza Mahmoudi; A.H.M. Roermund, van; Paul van Zeijl

doi:10.1109/SCVT.2012.6399397

A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines

C. Lu, Reza Mahmoudi, A.H.M. Roermund, van, Paul van Zeijl

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This paper presents a 107GHz LNA prototype using TSMC 65nm CMOS technology. It explores the limit of the CMOS technology by effectively optimizing the active and passive devices. An improvement of 1.6dB higher maximum stable/available gain (MSG/MAG) on the transistor is achieved around 110GHz by layout optimization and inductor neutralization technique. A high quality factor co-planar waveguide (CPW) transmission line is designed utilizing the slow-wave effect. A quality factor of 23.6 is demonstrated by EM-simulations while taken the consideration of satisfying the stringent layout design rules. Based on the optimization on the active and passive devices, a dual-stage LNA is designed, with a simulated power gain of 10.2dB and noise figure of 8dB at 107GHz, verified by chip-level EM-simulations. The power consumption is 28.2mW.

Original language	English
Title of host publication	Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-4
ISBN (Print)	978-1-4673-2113-6
DOIs	https://doi.org/10.1109/SCVT.2012.6399397
Publication status	Published - 2012
Event	19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012) - Eindhoven, Netherlands Duration: 16 Nov 2012 → 16 Nov 2012 Conference number: 19

Conference

Conference	19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012)
Abbreviated title	IEEE SCVT 2012
Country/Territory	Netherlands
City	Eindhoven
Period	16/11/12 → 16/11/12

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10.1109/SCVT.2012.6399397

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Lu, C., Mahmoudi, R., Roermund, van, A. H. M., & van Zeijl, P. (2012). A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines. In Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SCVT.2012.6399397

Lu, C. ; Mahmoudi, Reza ; Roermund, van, A.H.M. et al. / A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines. Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands. Piscataway : Institute of Electrical and Electronics Engineers, 2012. pp. 1-4

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title = "A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines",

abstract = "This paper presents a 107GHz LNA prototype using TSMC 65nm CMOS technology. It explores the limit of the CMOS technology by effectively optimizing the active and passive devices. An improvement of 1.6dB higher maximum stable/available gain (MSG/MAG) on the transistor is achieved around 110GHz by layout optimization and inductor neutralization technique. A high quality factor co-planar waveguide (CPW) transmission line is designed utilizing the slow-wave effect. A quality factor of 23.6 is demonstrated by EM-simulations while taken the consideration of satisfying the stringent layout design rules. Based on the optimization on the active and passive devices, a dual-stage LNA is designed, with a simulated power gain of 10.2dB and noise figure of 8dB at 107GHz, verified by chip-level EM-simulations. The power consumption is 28.2mW.",

author = "C. Lu and Reza Mahmoudi and {Roermund, van}, A.H.M. and {van Zeijl}, Paul",

year = "2012",

doi = "10.1109/SCVT.2012.6399397",

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publisher = "Institute of Electrical and Electronics Engineers",

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Lu, C, Mahmoudi, R, Roermund, van, AHM & van Zeijl, P 2012, A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines. in Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-4, 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), Eindhoven, Netherlands, 16/11/12. https://doi.org/10.1109/SCVT.2012.6399397

A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines. / Lu, C.; Mahmoudi, Reza; Roermund, van, A.H.M. et al.
Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands. Piscataway: Institute of Electrical and Electronics Engineers, 2012. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - This paper presents a 107GHz LNA prototype using TSMC 65nm CMOS technology. It explores the limit of the CMOS technology by effectively optimizing the active and passive devices. An improvement of 1.6dB higher maximum stable/available gain (MSG/MAG) on the transistor is achieved around 110GHz by layout optimization and inductor neutralization technique. A high quality factor co-planar waveguide (CPW) transmission line is designed utilizing the slow-wave effect. A quality factor of 23.6 is demonstrated by EM-simulations while taken the consideration of satisfying the stringent layout design rules. Based on the optimization on the active and passive devices, a dual-stage LNA is designed, with a simulated power gain of 10.2dB and noise figure of 8dB at 107GHz, verified by chip-level EM-simulations. The power consumption is 28.2mW.

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Lu C, Mahmoudi R, Roermund, van AHM, van Zeijl P. A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines. In Proceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands. Piscataway: Institute of Electrical and Electronics Engineers. 2012. p. 1-4 doi: 10.1109/SCVT.2012.6399397

A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines

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