A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology

Hao Gao, Jixin Chen, Wei Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.

Original languageEnglish
Title of host publication2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
PublisherIEEE Computer Society
Pages428-429
Number of pages2
ISBN (Electronic)9781728166209
DOIs
Publication statusPublished - 11 Mar 2021
Event45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, United States
Duration: 8 Nov 202013 Nov 2020

Conference

Conference45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
CountryUnited States
CityVirtual, Buffalo
Period8/11/2013/11/20

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