Abstract
This article presents an on-chip low-pass filter (LPF) for cognitive radio (CR) in a 130-nm SiGe BiCMOS technology. The LPF achieves a broad tuning range of 0.1–3.2 GHz with a 100-MHz step. To address gain variation caused by the frequency-peaking effect, we propose an adaptive impedance transformation (AIT) technique, achieving a remarkable ripple of less than 3.01 dB across the entire 0.1–3.2 GHz frequency band. This technique also enhances passband selectivity. Furthermore, we introduce a novel operational amplifier (OPAMP) featuring a four-stage heterojunction bipolar transistor (HBT)–complementary metal–oxide–semiconductor (CMOS) transistor composite pair. Leveraging the inherent advantages of both HBT and CMOS technologies, this OPAMP elevates the gain-bandwidth (GBW) product from 0.834 GHz of a CMOS-only topology to an impressive 8.33 GHz. The LPF requires only 8 mA in the low-power mode at 1.5 V and 17.5 mA in the high-power mode at 2 V. With such wide-tuning range, the proposed LPF is suitable for CR applications.
Original language | English |
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Article number | 10693304 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | X |
Issue number | XX |
Early online date | 24 Sept 2024 |
DOIs | |
Publication status | E-pub ahead of print - 24 Sept 2024 |
Keywords
- Cutoff frequency
- Wideband
- Low-pass filters
- Transfer functions
- Microwave filters
- Impedance
- Tuning
- Adaptive impedance transformation (AIT)
- low-pass filter (LPF)
- peaking reducing
- on-chip
- selectivity enhancement