A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

Hao Gao, Jixin Chen, Wei Hong, Peter Baltus

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Abstract

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm 2 and the output power at 0.26 THz is 0 dBm.

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-5386-8285-2
DOIs
Publication statusPublished - Sep 2019
Event4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019) - Paris, France
Duration: 1 Sep 20196 Sep 2019
http://www.irmmw-thz2019.org/

Conference

Conference4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
Abbreviated titleIRMMW-THz 2019
CountryFrance
CityParis
Period1/09/196/09/19
Internet address

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    Gao, H., Chen, J., Hong, W., & Baltus, P. (2019). A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves [8874444] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IRMMW-THz.2019.8874444