A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

Hao Gao; Jixin Chen; Wei Hong; Peter Baltus

doi:10.1109/IRMMW-THz.2019.8874444

A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

Hao Gao, Jixin Chen, Wei Hong, Peter Baltus

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

2 Downloads (Pure)

Abstract

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm ² and the output power at 0.26 THz is 0 dBm.

Original language	English
Title of host publication	IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-5386-8285-2
DOIs	https://doi.org/10.1109/IRMMW-THz.2019.8874444
Publication status	Published - Sept 2019
Event	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 1 Sept 2019 → 6 Sept 2019 Conference number: 44

Conference

Conference	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Abbreviated title	IRMMW-THz
Country/Territory	France
City	Paris
Period	1/09/19 → 6/09/19

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10.1109/IRMMW-THz.2019.8874444

Cite this

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title = "A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power",

abstract = "This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm 2 and the output power at 0.26 THz is 0 dBm. ",

author = "Hao Gao and Jixin Chen and Wei Hong and Peter Baltus",

year = "2019",

month = sep,

doi = "10.1109/IRMMW-THz.2019.8874444",

language = "English",

booktitle = "IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, IRMMW-THz ; Conference date: 01-09-2019 Through 06-09-2019",

}

Gao, H, Chen, J, Hong, W & Baltus, P 2019, A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. in IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves., 8874444, Institute of Electrical and Electronics Engineers, Piscataway, 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, Paris, France, 1/09/19. https://doi.org/10.1109/IRMMW-THz.2019.8874444

A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. / Gao, Hao; Chen, Jixin; Hong, Wei et al.
IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. Piscataway: Institute of Electrical and Electronics Engineers, 2019. 8874444.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

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AU - Hong, Wei

AU - Baltus, Peter

N1 - Conference code: 44

PY - 2019/9

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N2 - This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm 2 and the output power at 0.26 THz is 0 dBm.

AB - This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm 2 and the output power at 0.26 THz is 0 dBm.

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DO - 10.1109/IRMMW-THz.2019.8874444

M3 - Conference contribution

BT - IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019

Y2 - 1 September 2019 through 6 September 2019

ER -

A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

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