A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

Hao Gao, Jixin Chen, Wei Hong, Peter Baltus

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This contribution presents a 0.26 THz power unit in a 0.13 Ã,µm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with a 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of the core part of this power unit is 110*900Ã,µm2 and the output power at 0.26 THz is 0 dBm.
LanguageEnglish
Title of host publicationInternational Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-5386-8285-2
DOIs
StatePublished - 2019
Event4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019) - Paris, France
Duration: 1 Sep 20196 Sep 2019
http://www.irmmw-thz2019.org/

Conference

Conference4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
Abbreviated titleIRMMW-THz 2019
CountryFrance
CityParis
Period1/09/196/09/19
Internet address

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Frequency doublers
Submillimeter waves
BiCMOS technology

Cite this

Gao, H., Chen, J., Hong, W., & Baltus, P. (2019). A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. In International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/IRMMW-THz.2019.8874444
Gao, Hao ; Chen, Jixin ; Hong, Wei ; Baltus, Peter. / A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). Piscataway : Institute of Electrical and Electronics Engineers, 2019.
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title = "A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power",
abstract = "This contribution presents a 0.26 THz power unit in a 0.13 {\~A},{\^A}µm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with a 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of the core part of this power unit is 110*900{\~A},{\^A}µm2 and the output power at 0.26 THz is 0 dBm.",
author = "Hao Gao and Jixin Chen and Wei Hong and Peter Baltus",
year = "2019",
doi = "10.1109/IRMMW-THz.2019.8874444",
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Gao, H, Chen, J, Hong, W & Baltus, P 2019, A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. in International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). Institute of Electrical and Electronics Engineers, Piscataway, 4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France, 1/09/19. DOI: 10.1109/IRMMW-THz.2019.8874444

A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. / Gao, Hao; Chen, Jixin; Hong, Wei; Baltus, Peter.

International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). Piscataway : Institute of Electrical and Electronics Engineers, 2019.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

AU - Gao,Hao

AU - Chen,Jixin

AU - Hong,Wei

AU - Baltus,Peter

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N2 - This contribution presents a 0.26 THz power unit in a 0.13 Ã,µm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with a 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of the core part of this power unit is 110*900Ã,µm2 and the output power at 0.26 THz is 0 dBm.

AB - This contribution presents a 0.26 THz power unit in a 0.13 Ã,µm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with a 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of the core part of this power unit is 110*900Ã,µm2 and the output power at 0.26 THz is 0 dBm.

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DO - 10.1109/IRMMW-THz.2019.8874444

M3 - Conference contribution

BT - International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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ER -

Gao H, Chen J, Hong W, Baltus P. A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. In International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). Piscataway: Institute of Electrical and Electronics Engineers. 2019. Available from, DOI: 10.1109/IRMMW-THz.2019.8874444