900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Domine Leenaerts; Jos Bergervoet; Jan Willem Lobeek; Marek Schmidt-Szalowski

doi:10.1109/RFIC.2010.5477321

900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Domine Leenaerts, Jos Bergervoet, Jan Willem Lobeek, Marek Schmidt-Szalowski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

Abstract

A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.

Original language	English
Title of host publication	Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
Publisher	Institute of Electrical and Electronics Engineers
Pages	513-516
Number of pages	4
ISBN (Print)	9781424462421
DOIs	https://doi.org/10.1109/RFIC.2010.5477321
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010 - Anaheim, CA, United States Duration: 23 May 2010 → 25 May 2010

Conference

Conference	2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
Country/Territory	United States
City	Anaheim, CA
Period	23/05/10 → 25/05/10

Keywords

Base-station
BiCMOS
Linearity
Low noise amplifier

Access to Document

10.1109/RFIC.2010.5477321

Cite this

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title = "900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3",

abstract = "A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.",

keywords = "Base-station, BiCMOS, Linearity, Low noise amplifier",

author = "Domine Leenaerts and Jos Bergervoet and Lobeek, {Jan Willem} and Marek Schmidt-Szalowski",

year = "2010",

doi = "10.1109/RFIC.2010.5477321",

language = "English",

isbn = "9781424462421",

pages = "513--516",

booktitle = "Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010 ; Conference date: 23-05-2010 Through 25-05-2010",

}

Leenaerts, D, Bergervoet, J, Lobeek, JW & Schmidt-Szalowski, M 2010, 900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3. in Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010., 5477321, Institute of Electrical and Electronics Engineers, pp. 513-516, 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010, Anaheim, CA, United States, 23/05/10. https://doi.org/10.1109/RFIC.2010.5477321

900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3. / Leenaerts, Domine; Bergervoet, Jos; Lobeek, Jan Willem et al.
Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010. Institute of Electrical and Electronics Engineers, 2010. p. 513-516 5477321.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Leenaerts, Domine

AU - Bergervoet, Jos

AU - Lobeek, Jan Willem

AU - Schmidt-Szalowski, Marek

PY - 2010

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N2 - A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.

AB - A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.

KW - Base-station

KW - BiCMOS

KW - Linearity

KW - Low noise amplifier

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BT - Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010

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ER -

900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

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Keywords

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