Abstract
We present an 8b general-purpose microprocessor realized in a hybrid oxide-organic complementary thin-film technology. The n-type transistors are based on a solution-processed n-type metal-oxide semiconductor, and the p-type transistors use an organic semiconductor. As compared to previous work utilizing unipolar logic gates [1], the higher mobility n-type semiconductor and the use of complementary logic allow for a >50x speed improvement. It also adds robustness to the design, which allowed for a more complex and complete standard cell library. The microprocessor consists of two parts, a processor core chip and an instruction generator. The instructions are stored in a Write-Once-Read-Many (WORM) memory formatted by a post-fabrication inkjet printing step, called Print-Programmable Read-Only Memory (P2ROM). The entire processing was performed at temperatures compatible with plastic foil substrates, i.e., at or below 250°C [2].
Original language | English |
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Title of host publication | 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 486-487 |
Number of pages | 2 |
ISBN (Print) | 978-1-4799-0918-6 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 - San Francisco, United States Duration: 9 Feb 2014 → 13 Feb 2014 Conference number: 61 |
Conference
Conference | 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 |
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Abbreviated title | ISSCC 2014 |
Country/Territory | United States |
City | San Francisco |
Period | 9/02/14 → 13/02/14 |
Other | “Silicon Systems Bridging the Cloud” |