8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run

K. Lawniczuk, R. Piramidowicz, P. Szczepanski, P. J. Williams, M. J. Wale, M. K. Smit, X. J M Leijtens

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

16 Citations (Scopus)

Abstract

We demonstrate one of the first monolithically integrated multiwavelength lasers fabricated in an industrial fab exploring a generic foundry model. The lasers were realized by participating in multi-project wafer run. We present 8-channel sources that use arrayed-waveguide gratings (AWGs) as intra-cavity filters, in two configurations, with and without booster amplifier. The devices operate in the third telecommunication window, around 1.55 μm. The measured optical output power is up to 5dBm with side mode suppression ratio (SMSR) better than 40 dB. Our lasers were fabricated on an indium phosphide (InP) based platform.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Pages1-4
Publication statusPublished - 1 Dec 2011
Event23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011) - Berlin, Germany
Duration: 22 May 201126 May 2011
Conference number: 23

Conference

Conference23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011)
Abbreviated titleIPRM 2011
Country/TerritoryGermany
CityBerlin
Period22/05/1126/05/11
Other23rd International Conference on Indium Phosphide and related materials

Bibliographical note

Compound Semiconductor Week (CSW/IPRM), 2011 and Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials, 22-26 May 2011, Berlin, Germany

Fingerprint

Dive into the research topics of '8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run'. Together they form a unique fingerprint.

Cite this