40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

R. Luttge; D. Adam; F. Burkhardt; F. Hoke; H. Schacke; M. Schmidt; H. Wolf; A. Schmidt

doi:10.1016/S0167-9317(99)00073-8

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

R. Luttge, D. Adam, F. Burkhardt, F. Hoke, H. Schacke, M. Schmidt, H. Wolf, A. Schmidt

Microsystems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

1 Downloads (Pure)

Abstract

High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG developer which contains butoxy-ethoxy-ethanol as main component, for PMMA are investigated. The pattern accuracy meets an absolute tolerance of ±100 nm for features down to 2 µm with sidewall angles towards 90 degrees. However, the process offers pattern resolution down to 0.4 µm. The best results for absorber patterning have been achieved with gold seed layers. The main advantages of this technology are the stringent shape control with corner radii smaller than 0.5 µm. Using direct intermediate mask fabrication a fourteen-step process including photolithography can be replaced by a seven-step direct additive process onto mask blanks.

Original language	English
Title of host publication	Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium
Pages	247-250
DOIs	https://doi.org/10.1016/S0167-9317(99)00073-8
Publication status	Published - 1999

Publication series

Name	Microelectronic Engineering
Number	1-4
Volume	46
ISSN (Print)	0167-9317

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Luttge, R., Adam, D., Burkhardt, F., Hoke, F., Schacke, H., Schmidt, M., Wolf, H., & Schmidt, A. (1999). 40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication. In Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium (pp. 247-250). (Microelectronic Engineering; Vol. 46, No. 1-4). https://doi.org/10.1016/S0167-9317(99)00073-8

@inproceedings{5a82877e13ee49dabb0645cb1b51b5ae,

title = "40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication",

abstract = "High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG developer which contains butoxy-ethoxy-ethanol as main component, for PMMA are investigated. The pattern accuracy meets an absolute tolerance of ±100 nm for features down to 2 µm with sidewall angles towards 90 degrees. However, the process offers pattern resolution down to 0.4 µm. The best results for absorber patterning have been achieved with gold seed layers. The main advantages of this technology are the stringent shape control with corner radii smaller than 0.5 µm. Using direct intermediate mask fabrication a fourteen-step process including photolithography can be replaced by a seven-step direct additive process onto mask blanks.",

author = "R. Luttge and D. Adam and F. Burkhardt and F. Hoke and H. Schacke and M. Schmidt and H. Wolf and A. Schmidt",

year = "1999",

doi = "10.1016/S0167-9317(99)00073-8",

language = "English",

series = "Microelectronic Engineering",

number = "1-4",

pages = "247--250",

booktitle = "Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium",

}

Luttge, R, Adam, D, Burkhardt, F, Hoke, F, Schacke, H, Schmidt, M, Wolf, H & Schmidt, A 1999, 40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication. in Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium. Microelectronic Engineering, no. 1-4, vol. 46, pp. 247-250. https://doi.org/10.1016/S0167-9317(99)00073-8

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication. / Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium. 1999. p. 247-250 (Microelectronic Engineering; Vol. 46, No. 1-4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

AU - Luttge, R.

AU - Adam, D.

AU - Burkhardt, F.

AU - Hoke, F.

AU - Schacke, H.

AU - Schmidt, M.

AU - Wolf, H.

AU - Schmidt, A.

PY - 1999

Y1 - 1999

N2 - High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG developer which contains butoxy-ethoxy-ethanol as main component, for PMMA are investigated. The pattern accuracy meets an absolute tolerance of ±100 nm for features down to 2 µm with sidewall angles towards 90 degrees. However, the process offers pattern resolution down to 0.4 µm. The best results for absorber patterning have been achieved with gold seed layers. The main advantages of this technology are the stringent shape control with corner radii smaller than 0.5 µm. Using direct intermediate mask fabrication a fourteen-step process including photolithography can be replaced by a seven-step direct additive process onto mask blanks.

AB - High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG developer which contains butoxy-ethoxy-ethanol as main component, for PMMA are investigated. The pattern accuracy meets an absolute tolerance of ±100 nm for features down to 2 µm with sidewall angles towards 90 degrees. However, the process offers pattern resolution down to 0.4 µm. The best results for absorber patterning have been achieved with gold seed layers. The main advantages of this technology are the stringent shape control with corner radii smaller than 0.5 µm. Using direct intermediate mask fabrication a fourteen-step process including photolithography can be replaced by a seven-step direct additive process onto mask blanks.

U2 - 10.1016/S0167-9317(99)00073-8

DO - 10.1016/S0167-9317(99)00073-8

M3 - Conference contribution

T3 - Microelectronic Engineering

SP - 247

EP - 250

BT - Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium

ER -

Luttge R, Adam D, Burkhardt F, Hoke F, Schacke H, Schmidt M et al. 40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication. In Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98), 22-24 September 1998, Leuven, Belgium. 1999. p. 247-250. (Microelectronic Engineering; 1-4). https://doi.org/10.1016/S0167-9317(99)00073-8