Future generations of cellular RF transceivers require higher degrees of integration,
presumably using the third dimension. This paper describes technologies that we recently
studied and which have found or may soon find their implementation in RF and other
System-in-Package (SiP) applications. In passive integration we describe options to
integrate 3D 'trench' capacitors in silicon with a new world record capacitance density of =
400 nF/mm1 and break-down voltage> 6 V using Atomic Layer Deposition (ALD) of
multiple MIM layer stacks of high-k dielectrics (AI20 3) and conductive layers (TiN). We also describe a few through-silicon via (TSV) drilling and filling techniques for 3D die and wafer stacking and generic SiP integration with a small rorm factor. Here, dry and wet-chemical methods were applied successfully in both the drilling and filling.
We compare RIE etching and (photo)chemical etching, the latter method yielding ultrafine
high aspect ratio (-1.5 x200 Ilm) vias. We report on a 'bottom-up' Cu-electroplating
method and on some preliminary eu-paste tilling tests.
|Conference||conference; International Workshop 3D System Integration; 2007-10-01; 2007-10-02|
|Period||1/10/07 → 2/10/07|
|Other||International Workshop 3D System Integration|