Abstract
In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase-separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed.
Original language | English |
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Pages (from-to) | 1231-1237 |
Number of pages | 7 |
Journal | Journal of Polymer Science, Part B: Polymer Physics |
Volume | 53 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1 Sept 2015 |
Keywords
- AFM
- phase separation
- organic memory
- selective dissolution
- thin films