36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic; Xi Zhang; Fabrice Blache; Karim Mekhazni; Marion K. Matters-Kammerer; Helene Debregeas; Xaveer Leijtens; Kevin Williams

doi:10.1049/cp.2019.1081

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic
, Xi Zhang
, Fabrice Blache
, Karim Mekhazni
, Marion K. Matters-Kammerer
, Helene Debregeas
, Xaveer Leijtens
, Kevin Williams

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

Original language	English
Title of host publication	45th European Conference on Optical Communication, ECOC 2019
Publisher	Institution of Engineering and Technology
Number of pages	3
ISBN (Print)	978-1-83953-185-9
DOIs	https://doi.org/10.1049/cp.2019.1081
Publication status	Published - 30 Jun 2020
Event	45th European Conference on Optical Communication (ECOC 2019) - Dublin, Ireland Duration: 22 Sept 2019 → 26 Sept 2019 Conference number: 45 https://www.ecoc2019.org/

Publication series

Name	IET Conference Publications
Number	CP765

Conference

Conference	45th European Conference on Optical Communication (ECOC 2019)
Abbreviated title	ECOC 2019
Country/Territory	Ireland
City	Dublin
Period	22/09/19 → 26/09/19
Internet address	https://www.ecoc2019.org/

Funding

The first two authors contributed equally to the presented work. The authors would like to thank the European Commission for funding this research through projects FP7-PEOPLE under grant agreement no 317316, the H2020 project WIPE under grant agreement no 688572, and the Dutch Stimulus OPZuid programme through the Open Innovation Photonic ICs project (PROJ-00315).

Keywords

Driver Circuits
Optical Modulation
Photonic Integrated Circuits

Access to Document

10.1049/cp.2019.1081

Author versionFinal author version , 840 KB

Cite this

Trajkovic, M., Zhang, X., Blache, F., Mekhazni, K., Matters-Kammerer, M. K., Debregeas, H., Leijtens, X., & Williams, K. (2020). 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. In 45th European Conference on Optical Communication, ECOC 2019 Article 9125809 (IET Conference Publications; No. CP765). Institution of Engineering and Technology. https://doi.org/10.1049/cp.2019.1081

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title = "36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms",

abstract = "We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.",

keywords = "Driver Circuits, Optical Modulation, Photonic Integrated Circuits",

author = "Marija Trajkovic and Xi Zhang and Fabrice Blache and Karim Mekhazni and Matters-Kammerer, \{Marion K.\} and Helene Debregeas and Xaveer Leijtens and Kevin Williams",

year = "2020",

month = jun,

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doi = "10.1049/cp.2019.1081",

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isbn = "978-1-83953-185-9",

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Trajkovic, M, Zhang, X, Blache, F, Mekhazni, K, Matters-Kammerer, MK, Debregeas, H, Leijtens, X & Williams, K 2020, 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. in 45th European Conference on Optical Communication, ECOC 2019., 9125809, IET Conference Publications, no. CP765, Institution of Engineering and Technology, 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland, 22/09/19. https://doi.org/10.1049/cp.2019.1081

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. / Trajkovic, Marija; Zhang, Xi; Blache, Fabrice et al.
45th European Conference on Optical Communication, ECOC 2019. Institution of Engineering and Technology, 2020. 9125809 (IET Conference Publications; No. CP765).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

AU - Trajkovic, Marija

AU - Zhang, Xi

AU - Blache, Fabrice

AU - Mekhazni, Karim

AU - Matters-Kammerer, Marion K.

AU - Debregeas, Helene

AU - Leijtens, Xaveer

AU - Williams, Kevin

N1 - Conference code: 45

PY - 2020/6/30

Y1 - 2020/6/30

N2 - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

AB - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

KW - Driver Circuits

KW - Optical Modulation

KW - Photonic Integrated Circuits

UR - https://www.scopus.com/pages/publications/85086900639

U2 - 10.1049/cp.2019.1081

DO - 10.1049/cp.2019.1081

M3 - Conference contribution

SN - 978-1-83953-185-9

T3 - IET Conference Publications

BT - 45th European Conference on Optical Communication, ECOC 2019

PB - Institution of Engineering and Technology

T2 - 45th European Conference on Optical Communication (ECOC 2019)

Y2 - 22 September 2019 through 26 September 2019

ER -

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

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