36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic, Xi Zhang, Fabrice Blache, Karim Mekhazni, Marion K. Matters-Kammerer, Helene Debregeas, Xaveer Leijtens, Kevin Williams

Research output: Contribution to conferencePaperAcademic

Abstract

We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

Conference

ConferenceThe 45th European Conference on Optical Communication
Abbreviated titleECOC 2019
CountryIreland
CityDublin
Period22/09/1926/09/19
Internet address

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foundries
modulators
platforms
direct current
photonics
keying
ultrahigh frequencies
electronics
integrated circuits
extinction
assembly
recording
diagrams
wire
modulation
fabrication

Cite this

Trajkovic, M., Zhang, X., Blache, F., Mekhazni, K., Matters-Kammerer, M. K., Debregeas, H., ... Williams, K. (2019). 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. Paper presented at The 45th European Conference on Optical Communication, Dublin, Ireland.
Trajkovic, Marija ; Zhang, Xi ; Blache, Fabrice ; Mekhazni, Karim ; Matters-Kammerer, Marion K. ; Debregeas, Helene ; Leijtens, Xaveer ; Williams, Kevin. / 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. Paper presented at The 45th European Conference on Optical Communication, Dublin, Ireland.3 p.
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title = "36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms",
abstract = "We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.",
author = "Marija Trajkovic and Xi Zhang and Fabrice Blache and Karim Mekhazni and Matters-Kammerer, {Marion K.} and Helene Debregeas and Xaveer Leijtens and Kevin Williams",
year = "2019",
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note = "The 45th European Conference on Optical Communication, ECOC 2019 ; Conference date: 22-09-2019 Through 26-09-2019",
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Trajkovic, M, Zhang, X, Blache, F, Mekhazni, K, Matters-Kammerer, MK, Debregeas, H, Leijtens, X & Williams, K 2019, '36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms' Paper presented at The 45th European Conference on Optical Communication, Dublin, Ireland, 22/09/19 - 26/09/19, .

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. / Trajkovic, Marija; Zhang, Xi; Blache, Fabrice; Mekhazni, Karim; Matters-Kammerer, Marion K.; Debregeas, Helene; Leijtens, Xaveer; Williams, Kevin.

2019. Paper presented at The 45th European Conference on Optical Communication, Dublin, Ireland.

Research output: Contribution to conferencePaperAcademic

TY - CONF

T1 - 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

AU - Trajkovic,Marija

AU - Zhang,Xi

AU - Blache,Fabrice

AU - Mekhazni,Karim

AU - Matters-Kammerer,Marion K.

AU - Debregeas,Helene

AU - Leijtens,Xaveer

AU - Williams,Kevin

PY - 2019/9/26

Y1 - 2019/9/26

N2 - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

AB - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

M3 - Paper

ER -

Trajkovic M, Zhang X, Blache F, Mekhazni K, Matters-Kammerer MK, Debregeas H et al. 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. 2019. Paper presented at The 45th European Conference on Optical Communication, Dublin, Ireland.