36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic, Xi Zhang, Fabrice Blache, Karim Mekhazni, Marion K. Matters-Kammerer, Helene Debregeas, Xaveer Leijtens, Kevin Williams

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We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.
Original languageEnglish
Title of host publication45th European Conference on Optical Communication, ECOC 2019
PublisherInstitution of Engineering and Technology (IET)
Number of pages3
ISBN (Print)978-1-83953-185-9
Publication statusPublished - 30 Jun 2020
Event45th European Conference on Optical Communication (ECOC 2019) - Dublin, Ireland
Duration: 22 Sep 201926 Sep 2019
Conference number: 45

Publication series

NameIET Conference Publications


Conference45th European Conference on Optical Communication (ECOC 2019)
Abbreviated titleECOC 2019
Internet address


  • Driver Circuits
  • Optical Modulation
  • Photonic Integrated Circuits


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