320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

A. Albores Mejia; F. Gomez-Agis; H.J.S. Dorren; X.J.M. Leijtens; M.K. Smit; D.J. Robbins; K.A. Williams

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

A. Albores Mejia, F. Gomez-Agis, H.J.S. Dorren, X.J.M. Leijtens, M.K. Smit, D.J. Robbins, K.A. Williams

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

117 Downloads (Pure)

Abstract

Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

Original language	English
Title of host publication	Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	We.7.E.1-1/4
ISBN (Print)	978-1-4244-8535-2
Publication status	Published - 2010

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Albores Mejia, A., Gomez-Agis, F., Dorren, H. J. S., Leijtens, X. J. M., Smit, M. K., Robbins, D. J., & Williams, K. A. (2010). 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. In Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy (pp. We.7.E.1-1/4). Institute of Electrical and Electronics Engineers.

Albores Mejia, A. ; Gomez-Agis, F. ; Dorren, H.J.S. et al. / 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway : Institute of Electrical and Electronics Engineers, 2010. pp. We.7.E.1-1/4

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title = "320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit",

abstract = "Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.",

author = "{Albores Mejia}, A. and F. Gomez-Agis and H.J.S. Dorren and X.J.M. Leijtens and M.K. Smit and D.J. Robbins and K.A. Williams",

year = "2010",

language = "English",

isbn = "978-1-4244-8535-2",

pages = "We.7.E.1--1/4",

booktitle = "Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy",

publisher = "Institute of Electrical and Electronics Engineers",

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Albores Mejia, A, Gomez-Agis, F, Dorren, HJS, Leijtens, XJM , Smit, MK, Robbins, DJ & Williams, KA 2010, 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. in Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Institute of Electrical and Electronics Engineers, Piscataway, pp. We.7.E.1-1/4.

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. / Albores Mejia, A.; Gomez-Agis, F.; Dorren, H.J.S. et al.

Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway : Institute of Electrical and Electronics Engineers, 2010. p. We.7.E.1-1/4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

AU - Albores Mejia, A.

AU - Gomez-Agis, F.

AU - Dorren, H.J.S.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

AU - Robbins, D.J.

AU - Williams, K.A.

PY - 2010

Y1 - 2010

N2 - Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

AB - Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

M3 - Conference contribution

SN - 978-1-4244-8535-2

SP - We.7.E.1-1/4

BT - Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Albores Mejia A, Gomez-Agis F, Dorren HJS, Leijtens XJM , Smit MK, Robbins DJ et al. 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. In Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway: Institute of Electrical and Electronics Engineers. 2010. p. We.7.E.1-1/4

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

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