2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires

Fabrizio Rovaris, Wouter H.J. Peeters, Anna Marzegalli, Frank Glas, Laetitia Vincent, Leo Miglio, Erik P.A.M. Bakkers, Marcel A. Verheijen (Corresponding author), Emilio Scalise (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The nucleation mechanism of ubiquitous basal stacking faults observed in hexagonal Si/Ge nanowires is still an enigma. These defects may hinder the exploitation of hexagonal Si/Ge for nano-optoelectronics and quantum technologies. In this work, the formation of the I3 basal stacking faults is investigated at the atomistic level, and results are compared to the experimental findings. We propose that these extended defects are caused by dislocation lines elongated in ⟨112̅0⟩ directions, which in turn arise from glide terminations of the step edges when two growing fronts run into each other.

Original languageEnglish
Pages (from-to)9396–9402
Number of pages7
JournalACS Applied Nano Materials
Volume7
Issue number8
DOIs
Publication statusPublished - 26 Apr 2024

Keywords

  • basal stacking faults
  • hexagonal diamond SiGe
  • I defect
  • machine learning interatomic potentials
  • partial dislocations
  • SiGe nanowires

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