2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

C.J..J. Dachs, M. A. Verheijen, M. Kaiser, P. A. Stolk, Y. V. Ponomarev

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18ìm NMOST is presented.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages360-363
Number of pages4
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000

Conference

Conference30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period11/09/0013/09/00

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