2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

C.J..J. Dachs; M. A. Verheijen; M. Kaiser; P. A. Stolk; Y. V. Ponomarev

doi:10.1109/ESSDERC.2000.194789

2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

C.J..J. Dachs, M. A. Verheijen, M. Kaiser, P. A. Stolk, Y. V. Ponomarev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18ìm NMOST is presented.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	360-363
Number of pages	4
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194789
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

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10.1109/ESSDERC.2000.194789

Cite this

Dachs, C. J. J., Verheijen, M. A., Kaiser, M., Stolk, P. A., & Ponomarev, Y. V. (2000). 2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations. In ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 360-363). Article 1503719 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDERC.2000.194789

@inproceedings{c2c2d0905a5242d581dddacfddc02e21,

title = "2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations",

abstract = "In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18{\`i}m NMOST is presented.",

author = "C.J..J. Dachs and Verheijen, {M. A.} and M. Kaiser and Stolk, {P. A.} and Ponomarev, {Y. V.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2000.194789",

language = "English",

isbn = "9782863322482",

pages = "360--363",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

}

Dachs, CJJ, Verheijen, MA, Kaiser, M, Stolk, PA & Ponomarev, YV 2000, 2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations. in ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503719, Institute of Electrical and Electronics Engineers, Piscataway, pp. 360-363, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194789

2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations. / Dachs, C.J..J.; Verheijen, M. A.; Kaiser, M. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. Piscataway: Institute of Electrical and Electronics Engineers, 2000. p. 360-363 1503719.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Dachs, C.J..J.

AU - Verheijen, M. A.

AU - Kaiser, M.

AU - Stolk, P. A.

AU - Ponomarev, Y. V.

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AB - In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18ìm NMOST is presented.

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DO - 10.1109/ESSDERC.2000.194789

M3 - Conference contribution

AN - SCOPUS:84907819581

SN - 9782863322482

SP - 360

EP - 363

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

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ER -

Dachs CJJ, Verheijen MA, Kaiser M, Stolk PA, Ponomarev YV. 2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations. In ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. Piscataway: Institute of Electrical and Electronics Engineers. 2000. p. 360-363. 1503719 doi: 10.1109/ESSDERC.2000.194789

2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

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