28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power

J. Wang; l. Wang; C. Li; B.M. Patarata Romeira; E. Wasige

doi:10.1049/el.2013.1583

28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power

J. Wang, l. Wang, C. Li, B.M. Patarata Romeira, E. Wasige

Research output: Contribution to journal › Article › Academic › peer-review

24 Citations (Scopus)

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Abstract

Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 × 5 µm2) in parallel. The oscillator works at 28.7 GHz with -0.7 dBm output power. The phase noise was -95 dBc/Hz at 100 kHz and -114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.

Original language	English
Pages (from-to)	816-818
Journal	Electronics Letters
Volume	49
Issue number	13
DOIs	https://doi.org/10.1049/el.2013.1583
Publication status	Published - 2013
Externally published	Yes

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title = "28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power",

abstract = "Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 × 5 µm2) in parallel. The oscillator works at 28.7 GHz with -0.7 dBm output power. The phase noise was -95 dBc/Hz at 100 kHz and -114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.",

author = "J. Wang and l. Wang and C. Li and {Patarata Romeira}, B.M. and E. Wasige",

year = "2013",

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AU - Wang, l.

AU - Li, C.

AU - Patarata Romeira, B.M.

AU - Wasige, E.

PY - 2013

Y1 - 2013

N2 - Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 × 5 µm2) in parallel. The oscillator works at 28.7 GHz with -0.7 dBm output power. The phase noise was -95 dBc/Hz at 100 kHz and -114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.

AB - Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 × 5 µm2) in parallel. The oscillator works at 28.7 GHz with -0.7 dBm output power. The phase noise was -95 dBc/Hz at 100 kHz and -114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.

U2 - 10.1049/el.2013.1583

DO - 10.1049/el.2013.1583

M3 - Article

VL - 49

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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