26.1% thin-film GaAs solar cell using epitaxial lift-off

G.J. Bauhuis; P. Mulder; E.J. Haverkamp; J.C.C.M. Huijben; J.J. Schermer

doi:10.1016/j.solmat.2009.03.027

26.1% thin-film GaAs solar cell using epitaxial lift-off

G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.C.C.M. Huijben, J.J. Schermer

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Abstract

The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types.

Original language	English
Pages (from-to)	1488-1491
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	9
DOIs	https://doi.org/10.1016/j.solmat.2009.03.027
Publication status	Published - 2009
Externally published	Yes

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title = "26.1% thin-film GaAs solar cell using epitaxial lift-off",

abstract = "The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types.",

author = "G.J. Bauhuis and P. Mulder and E.J. Haverkamp and J.C.C.M. Huijben and J.J. Schermer",

year = "2009",

doi = "10.1016/j.solmat.2009.03.027",

language = "English",

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pages = "1488--1491",

journal = "Solar Energy Materials and Solar Cells",

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publisher = "Elsevier B.V.",

number = "9",

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TY - JOUR

T1 - 26.1% thin-film GaAs solar cell using epitaxial lift-off

AU - Bauhuis, G.J.

AU - Mulder, P.

AU - Haverkamp, E.J.

AU - Huijben, J.C.C.M.

AU - Schermer, J.J.

PY - 2009

Y1 - 2009

N2 - The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types.

AB - The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types.

U2 - 10.1016/j.solmat.2009.03.027

DO - 10.1016/j.solmat.2009.03.027

M3 - Article

SN - 0927-0248

VL - 93

SP - 1488

EP - 1491

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 9

ER -

26.1% thin-film GaAs solar cell using epitaxial lift-off

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