26.1% thin-film GaAs solar cell using epitaxial lift-off

G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.C.C.M. Huijben, J.J. Schermer

Research output: Contribution to journalArticleAcademicpeer-review

208 Citations (Scopus)
1 Downloads (Pure)

Abstract

The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types.
Original languageEnglish
Pages (from-to)1488-1491
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume93
Issue number9
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint Dive into the research topics of '26.1% thin-film GaAs solar cell using epitaxial lift-off'. Together they form a unique fingerprint.

Cite this