We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths λs up to 13μm at room temperature with relaxation times τs of 2.5 ns. At 4 K, the diffusion coefficient rises up to 0.52m2/s, a value five times higher than the best achieved for graphene spin valves up to date. As a consequence, λs rises up to 24μm with τs as high as 2.9 ns. We characterized three different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the nonencapsulated outer regions.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 19 Nov 2015|