1/f Noise sources

F.N. Hooge

Research output: Contribution to journalArticleAcademicpeer-review

747 Citations (Scopus)
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Abstract

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Original languageEnglish
Pages (from-to)1926-1935
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume41
DOIs
Publication statusPublished - 1994

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