Abstract
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Original language | English |
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Pages (from-to) | 1926-1935 |
Number of pages | 10 |
Journal | IEEE Transactions on Electron Devices |
Volume | 41 |
DOIs | |
Publication status | Published - 1994 |