1/f Noise sources

F.N. Hooge

doi:10.1109/16.333808

1/f Noise sources

F.N. Hooge

Integrated Circuits

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Abstract

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices

Original language	English
Pages (from-to)	1926-1935
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	41
DOIs	https://doi.org/10.1109/16.333808
Publication status	Published - 1994

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@article{62b417ca93c3479eb86e1f4f4c8192ce,

title = "1/f Noise sources",

abstract = "This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices",

author = "F.N. Hooge",

year = "1994",

doi = "10.1109/16.333808",

language = "English",

volume = "41",

pages = "1926--1935",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

}

TY - JOUR

T1 - 1/f Noise sources

AU - Hooge, F.N.

PY - 1994

Y1 - 1994

N2 - This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices

AB - This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices

U2 - 10.1109/16.333808

DO - 10.1109/16.333808

M3 - Article

VL - 41

SP - 1926

EP - 1935

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -

1/f Noise sources

Abstract

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