An experimental investigation has been carried out to confirm that contact noise of two crossed semiconductor bars with native oxide films in between can be understood as a volume 1/f noise. Noise and contact resistance have been measured as functions of the force F on the crossed bars. F varies between 6 N and 6×10-5 N. From a simple model, an equation is derived which relates the 1/f noise intensity C to the contact resistance R. The calculations are in agreement with the experimental C-R plots. Two extreme situations are possible: constriction dominated and film dominated. Which situation actually occurs can be seen in the C-R plot as well as in the R-F plot.