1/f noise of point contacts affected by uniform films

Research output: Contribution to journalArticleAcademicpeer-review

35 Citations (Scopus)

Abstract

An experimental investigation has been carried out to confirm that contact noise of two crossed semiconductor bars with native oxide films in between can be understood as a volume 1/f noise. Noise and contact resistance have been measured as functions of the force F on the crossed bars. F varies between 6 N and 6×10-5 N. From a simple model, an equation is derived which relates the 1/f noise intensity C to the contact resistance R. The calculations are in agreement with the experimental C-R plots. Two extreme situations are possible: constriction dominated and film dominated. Which situation actually occurs can be seen in the C-R plot as well as in the R-F plot.

Original languageEnglish
Pages (from-to)4563-4565
Number of pages3
JournalJournal of Applied Physics
Volume45
Issue number10
DOIs
Publication statusPublished - 1 Dec 1974

Fingerprint

Dive into the research topics of '1/f noise of point contacts affected by uniform films'. Together they form a unique fingerprint.

Cite this