1/f noise of point contacts affected by uniform films

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An experimental investigation has been carried out to confirm that contact noise of two crossed semiconductor bars with native oxide films in between can be understood as a volume 1/f noise. Noise and contact resistance have been measured as functions of the force F on the crossed bars. F varies between 6 N and 6×10-5 N. From a simple model, an equation is derived which relates the 1/f noise intensity C to the contact resistance R. The calculations are in agreement with the experimental C-R plots. Two extreme situations are possible: constriction dominated and film dominated. Which situation actually occurs can be seen in the C-R plot as well as in the R-F plot.

Original languageEnglish
Pages (from-to)4563-4565
Number of pages3
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1 Dec 1974


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