1/f Noise in polysilicon emitter bipolar transistors: Impact of reverse stress degradation

H.A.W. Markus, S.T.J.A. Vermeulen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationProc. 13th International Conference on Noise in Physical Systems
Place of PublicationSingapore
PublisherWorld Scientific
Pages466-469
Publication statusPublished - 1995
Event13th International Conference on Noise in Physical Systems -
Duration: 1 Jan 1995 → …

Conference

Conference13th International Conference on Noise in Physical Systems
Period1/01/95 → …

Cite this

Markus, H. A. W., & Vermeulen, S. T. J. A. (1995). 1/f Noise in polysilicon emitter bipolar transistors: Impact of reverse stress degradation. In Proc. 13th International Conference on Noise in Physical Systems (pp. 466-469). World Scientific.