1/f Noise in polysilicon emitter bipolar transistors: Impact of reverse stress degradation

H.A.W. Markus, S.T.J.A. Vermeulen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. 13th International Conference on Noise in Physical Systems
Place of Publication	Singapore
Publisher	World Scientific
Pages	466-469
Publication status	Published - 1995
Event	13th International Conference on Noise in Physical Systems - Duration: 1 Jan 1995 → …

Conference	13th International Conference on Noise in Physical Systems
Period	1/01/95 → …

Cite this

@inproceedings{27c55898182c40d590ace10d5c363961,

title = "1/f Noise in polysilicon emitter bipolar transistors: Impact of reverse stress degradation",

author = "H.A.W. Markus and S.T.J.A. Vermeulen",

year = "1995",

language = "English",

pages = "466--469",

booktitle = "Proc. 13th International Conference on Noise in Physical Systems",

publisher = "World Scientific",

address = "United States",

note = "13th International Conference on Noise in Physical Systems ; Conference date: 01-01-1995",

}

TY - GEN

T1 - 1/f Noise in polysilicon emitter bipolar transistors: Impact of reverse stress degradation

AU - Markus, H.A.W.

AU - Vermeulen, S.T.J.A.

PY - 1995

Y1 - 1995

M3 - Conference contribution

SP - 466

EP - 469

BT - Proc. 13th International Conference on Noise in Physical Systems

PB - World Scientific

CY - Singapore

T2 - 13th International Conference on Noise in Physical Systems

Y2 - 1 January 1995

ER -