1/f noise in homogeneous and inhomogeneous media

L.K.J. Vandamme, G. Trefan

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)
142 Downloads (Pure)

Abstract

Some experimental techniques for low-frequency resistance noise measurements are discussed. The criterion for using a low-noise current amplifier instead of voltage amplifier is given. A distinction is made between contact and bulk resistance contributions to the observed I If noise. The merits and difficulties of the application of the empirical relation for the 1/f noise in homogeneous and inhomogeneous media are addressed. The criterion that 1/f noise in homogeneous samples can only be detected for a number of free carriers N <1014 is calculated. The authors explain why the enhanced 1/f noise, due to poor crystal quality, current crowding at contacts or at grain boundaries, and at inhomogeneous internal interfaces can be used as a diagnostic tool for quality and reliability assessment of electronic devices
Original languageEnglish
Pages (from-to)3-12
Number of pages10
JournalIEE Proceedings - Circuits, Devices and Systems
Volume149
Issue number1
DOIs
Publication statusPublished - 2002

Fingerprint

Dive into the research topics of '1/f noise in homogeneous and inhomogeneous media'. Together they form a unique fingerprint.

Cite this