1/f Noise in bipolar transistors: Influence of emitter geometry, edge effects, and current crowding

H.A.W. Markus, B.J.J. Hanssen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationProc. 13th International Conference on Noise in Physical Systems
Place of PublicationSingapore
PublisherWorld Scientific
Pages462-465
Publication statusPublished - 1995
Event13th International Conference on Noise in Physical Systems -
Duration: 1 Jan 1995 → …

Conference

Conference13th International Conference on Noise in Physical Systems
Period1/01/95 → …

Cite this

Markus, H. A. W., & Hanssen, B. J. J. (1995). 1/f Noise in bipolar transistors: Influence of emitter geometry, edge effects, and current crowding. In Proc. 13th International Conference on Noise in Physical Systems (pp. 462-465). Singapore: World Scientific.