1/f noise in anisotropic and giant magnetoresistive elements

R.J.M. Veerdonk, van de, P.J.L. Belien, K.M. Schep, J.C.S. Kools, M.C. Nooijer, de, M.A.M. Gijs, R. Coehoorn, W.J.M. Jonge, de

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Abstract

Microfabricated magnetoresistive elements based on either the anisotropic or the giant magnetoresistance effect were tested for their frequency dependent resistance noise behavior at room temperature in a dc magnetic field, using a dc sense current. Thermal resistance noise was the dominant noise source above about 10 kHz. At low frequencies the resistance noise was found to be dominated by a 1/f contribution that depends on the applied magnetic field. The 1/f noise is relatively low and field independent when the element is in a saturated state and contains a relatively large and field dependent excess contribution when the magnetic field is in the sensitive field range of the element. The 1/f noise level observed in saturation is comparable to the 1/f noise level found in nonmagnetic metals; the excess noise has a magnetic origin. The variation of the excess noise level with the applied dc magnetic field can be explained qualitatively using a simple model based on thermal excitations of the magnetization direction.
Original languageEnglish
Pages (from-to)6152-6164
Number of pages13
JournalJournal of Applied Physics
Volume82
Issue number12
DOIs
Publication statusPublished - 1997

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