1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy

L. Ren, M.R. Leijs

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    Abstract

    The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter a between 10-4 and 10-3 was found to be dependent on the doping concentration.
    Original languageEnglish
    Pages (from-to)319-323
    Number of pages5
    JournalPhysica B: Condensed Matter
    Volume172
    Issue number3
    DOIs
    Publication statusPublished - 1991

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