1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy

L. Ren; M.R. Leijs

doi:10.1016/0921-4526(91)90449-O

1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy

L. Ren, M.R. Leijs

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Abstract

The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter a between 10-4 and 10-3 was found to be dependent on the doping concentration.

Original language	English
Pages (from-to)	319-323
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	172
Issue number	3
DOIs	https://doi.org/10.1016/0921-4526(91)90449-O
Publication status	Published - 1991

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10.1016/0921-4526(91)90449-O

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@article{369ee73c5cdc40beac122958461e183e,

title = "1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy",

abstract = "The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter a between 10-4 and 10-3 was found to be dependent on the doping concentration.",

author = "L. Ren and M.R. Leijs",

year = "1991",

doi = "10.1016/0921-4526(91)90449-O",

language = "English",

volume = "172",

pages = "319--323",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "3",

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T1 - 1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy

AU - Ren, L.

AU - Leijs, M.R.

PY - 1991

Y1 - 1991

N2 - The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter a between 10-4 and 10-3 was found to be dependent on the doping concentration.

AB - The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter a between 10-4 and 10-3 was found to be dependent on the doping concentration.

U2 - 10.1016/0921-4526(91)90449-O

DO - 10.1016/0921-4526(91)90449-O

M3 - Article

SN - 0921-4526

VL - 172

SP - 319

EP - 323

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 3

ER -

1/f noise at room temperature in n-type gallium arsenide grown by molecular beam epitaxy

Abstract

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