1/f noise as function of thickness in Al-doped ZnO thin films

A. Achahour; G. Leroy; N. Waldhoff; B. Ayachi; K. Blary; J.-P. Vilcot; L.K.J. Vandamme

doi:10.1109/ICNF.2017.7986000

1/f noise as function of thickness in Al-doped ZnO thin films

A. Achahour
, G. Leroy
, N. Waldhoff
, B. Ayachi
, K. Blary
, J.-P. Vilcot
, L.K.J. Vandamme

Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, R_sh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, C_us is proportional with the sheet resistance R_sh. Our results show that the resistivity decreases with thickness. The ratio K = C_us/R_sh is proportional to t², which indicates that mobility and the noise parameter α_H shrink with a shrinking thickness.

Original language	English
Title of host publication	2017 International Conference on Noise and Fluctuations, ICNF 2017
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	4
ISBN (Electronic)	978-1-5090-2760-6
DOIs	https://doi.org/10.1109/ICNF.2017.7986000
Publication status	Published - 19 Jul 2017
Event	2017 International Conference on Noise and Fluctuations, ICNF 2017 - Vilnius, Lithuania Duration: 20 Jun 2017 → 23 Jun 2017

Conference

Conference	2017 International Conference on Noise and Fluctuations, ICNF 2017
Country/Territory	Lithuania
City	Vilnius
Period	20/06/17 → 23/06/17

Keywords

1/f noise
AZO films
mobility
sheet resistance

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10.1109/ICNF.2017.7986000

Cite this

@inproceedings{18abe45535ee4537a470b1b070d2692d,

title = "1/f noise as function of thickness in Al-doped ZnO thin films",

abstract = "AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The ratio K = Cus/Rsh is proportional to t2, which indicates that mobility and the noise parameter αH shrink with a shrinking thickness.",

keywords = "1/f noise, AZO films, mobility, sheet resistance",

author = "A. Achahour and G. Leroy and N. Waldhoff and B. Ayachi and K. Blary and J.-P. Vilcot and L.K.J. Vandamme",

year = "2017",

month = jul,

day = "19",

doi = "10.1109/ICNF.2017.7986000",

language = "English",

booktitle = "2017 International Conference on Noise and Fluctuations, ICNF 2017",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2017 International Conference on Noise and Fluctuations, ICNF 2017 ; Conference date: 20-06-2017 Through 23-06-2017",

}

Achahour, A, Leroy, G, Waldhoff, N, Ayachi, B, Blary, K, Vilcot, J-P & Vandamme, LKJ 2017, 1/f noise as function of thickness in Al-doped ZnO thin films. in 2017 International Conference on Noise and Fluctuations, ICNF 2017., 7986000, Institute of Electrical and Electronics Engineers, Piscataway, 2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20/06/17. https://doi.org/10.1109/ICNF.2017.7986000

1/f noise as function of thickness in Al-doped ZnO thin films. / Achahour, A.; Leroy, G.; Waldhoff, N. et al.
2017 International Conference on Noise and Fluctuations, ICNF 2017. Piscataway: Institute of Electrical and Electronics Engineers, 2017. 7986000.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 1/f noise as function of thickness in Al-doped ZnO thin films

AU - Achahour, A.

AU - Leroy, G.

AU - Waldhoff, N.

AU - Ayachi, B.

AU - Blary, K.

AU - Vilcot, J.-P.

AU - Vandamme, L.K.J.

PY - 2017/7/19

Y1 - 2017/7/19

N2 - AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The ratio K = Cus/Rsh is proportional to t2, which indicates that mobility and the noise parameter αH shrink with a shrinking thickness.

AB - AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The ratio K = Cus/Rsh is proportional to t2, which indicates that mobility and the noise parameter αH shrink with a shrinking thickness.

KW - 1/f noise

KW - AZO films

KW - mobility

KW - sheet resistance

UR - https://www.scopus.com/pages/publications/85027985781

U2 - 10.1109/ICNF.2017.7986000

DO - 10.1109/ICNF.2017.7986000

M3 - Conference contribution

AN - SCOPUS:85027985781

BT - 2017 International Conference on Noise and Fluctuations, ICNF 2017

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2017 International Conference on Noise and Fluctuations, ICNF 2017

Y2 - 20 June 2017 through 23 June 2017

ER -

1/f noise as function of thickness in Al-doped ZnO thin films

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Conference

Keywords

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