1/f noise as function of thickness in Al-doped ZnO thin films

A. Achahour, G. Leroy, N. Waldhoff, B. Ayachi, K. Blary, J.-P. Vilcot, L.K.J. Vandamme

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The ratio K = Cus/Rsh is proportional to t2, which indicates that mobility and the noise parameter αH shrink with a shrinking thickness.

Original languageEnglish
Title of host publication2017 International Conference on Noise and Fluctuations, ICNF 2017
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)978-1-5090-2760-6
DOIs
Publication statusPublished - 19 Jul 2017
Event2017 International Conference on Noise and Fluctuations, ICNF 2017 - Vilnius, Lithuania
Duration: 20 Jun 201723 Jun 2017

Conference

Conference2017 International Conference on Noise and Fluctuations, ICNF 2017
CountryLithuania
CityVilnius
Period20/06/1723/06/17

Keywords

  • 1/f noise
  • AZO films
  • mobility
  • sheet resistance

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