160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

A. Albores Mejia; K.A. Williams; F. Gomez Agis; S. Zhang; H.J.S. Dorren; X.J.M. Leijtens; T. Vries, de; Y.S. Oei; M.J.R. Heck; L.M. Augustin; R. Nötzel; D.J. Robbins; M.K. Smit

doi:10.1109/HOTI.2009.10

160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

A. Albores Mejia, K.A. Williams, F. Gomez Agis, S. Zhang, H.J.S. Dorren, X.J.M. Leijtens, T. Vries, de, Y.S. Oei, M.J.R. Heck, L.M. Augustin, R. Nötzel, D.J. Robbins, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

2 Citations (Scopus)

179 Downloads (Pure)

Abstract

We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.

Original language	English
Title of host publication	Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	157-162
ISBN (Print)	978-0-7695-3847-1
DOIs	https://doi.org/10.1109/HOTI.2009.10
Publication status	Published - 2009

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Albores Mejia, A., Williams, K. A., Gomez Agis, F., Zhang, S., Dorren, H. J. S., Leijtens, X. J. M., Vries, de, T., Oei, Y. S., Heck, M. J. R., Augustin, L. M., Nötzel, R., Robbins, D. J., & Smit, M. K. (2009). 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. In Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009 (pp. 157-162). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/HOTI.2009.10

@inproceedings{08c7e11c09ec422684b4be9628539569,

title = "160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network",

abstract = "We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.",

author = "{Albores Mejia}, A. and K.A. Williams and {Gomez Agis}, F. and S. Zhang and H.J.S. Dorren and X.J.M. Leijtens and {Vries, de}, T. and Y.S. Oei and M.J.R. Heck and L.M. Augustin and R. N{\"o}tzel and D.J. Robbins and M.K. Smit",

year = "2009",

doi = "10.1109/HOTI.2009.10",

language = "English",

isbn = "978-0-7695-3847-1",

pages = "157--162",

booktitle = "Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Albores Mejia, A , Williams, KA , Gomez Agis, F, Zhang, S, Dorren, HJS, Leijtens, XJM, Vries, de, T, Oei, YS, Heck, MJR , Augustin, LM, Nötzel, R, Robbins, DJ & Smit, MK 2009, 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. in Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009. Institute of Electrical and Electronics Engineers, Piscataway, pp. 157-162. https://doi.org/10.1109/HOTI.2009.10

160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. / Albores Mejia, A.; Williams, K.A.; Gomez Agis, F. et al.
Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 157-162.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

AU - Albores Mejia, A.

AU - Williams, K.A.

AU - Gomez Agis, F.

AU - Zhang, S.

AU - Dorren, H.J.S.

AU - Leijtens, X.J.M.

AU - Vries, de, T.

AU - Oei, Y.S.

AU - Heck, M.J.R.

AU - Augustin, L.M.

AU - Nötzel, R.

AU - Robbins, D.J.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.

AB - We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.

U2 - 10.1109/HOTI.2009.10

DO - 10.1109/HOTI.2009.10

M3 - Conference contribution

SN - 978-0-7695-3847-1

SP - 157

EP - 162

BT - Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Albores Mejia A , Williams KA , Gomez Agis F, Zhang S, Dorren HJS, Leijtens XJM et al. 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. In Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 157-162 doi: 10.1109/HOTI.2009.10

160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

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