160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

A. Albores Mejia, K.A. Williams, F. Gomez Agis, S. Zhang, H.J.S. Dorren, X.J.M. Leijtens, T. Vries, de, Y.S. Oei, M.J.R. Heck, L.M. Augustin, R. Nötzel, D.J. Robbins, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

1 Citation (Scopus)
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Abstract

We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.
Original languageEnglish
Title of host publicationProceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages157-162
ISBN (Print)978-0-7695-3847-1
DOIs
Publication statusPublished - 2009

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