1.55-μm range InAs/InP (100) quantum dot telecom devices

R. Nötzel, S. Anantathanasarn, P.J. Veldhoven, van, Y. Barbarin, E.A.J.M. Bente, M.K. Smit, N.I. Cade, H. Kamada, B. Satpati, A. Trampert

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm2 per QD layer, and low loss of 4.2 cm-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton - biexciton emission around 1.55 µm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems
Original languageEnglish
Title of host publicationNanophotonics for Communication: Materials, Devices, and Systems IV
EditorsN.K. Dhar, A.K. Dutta, M.S. Islam
Place of PublicationBellingham
PublisherSPIE
Pages677904-1/10
ISBN (Print)978-0-8194-6939-7
DOIs
Publication statusPublished - 2007
Eventconference; Nanophotonics for communication: materials, devices, and systems IV r 2007, Boston, Massachusetts, USA; 2007-09-10; 2007-09-11 -
Duration: 10 Sep 200711 Sep 2007

Publication series

NameProceedings of SPIE
Volume6779
ISSN (Print)0277-786X

Conference

Conferenceconference; Nanophotonics for communication: materials, devices, and systems IV r 2007, Boston, Massachusetts, USA; 2007-09-10; 2007-09-11
Period10/09/0711/09/07
OtherNanophotonics for communication: materials, devices, and systems IV r 2007, Boston, Massachusetts, USA

Fingerprint

quantum dots
threshold currents
cryptography
information systems
waveguide lasers
ring lasers
low currents
light amplifiers
liquid nitrogen
vapor phase epitaxy
wavelengths
continuous radiation
lasing
ridges
insertion
interlayers
tuning
excitons
current density
fabrication

Cite this

Nötzel, R., Anantathanasarn, S., Veldhoven, van, P. J., Barbarin, Y., Bente, E. A. J. M., Smit, M. K., ... Trampert, A. (2007). 1.55-μm range InAs/InP (100) quantum dot telecom devices. In N. K. Dhar, A. K. Dutta, & M. S. Islam (Eds.), Nanophotonics for Communication: Materials, Devices, and Systems IV (pp. 677904-1/10). (Proceedings of SPIE; Vol. 6779). Bellingham: SPIE. https://doi.org/10.1117/12.731341
Nötzel, R. ; Anantathanasarn, S. ; Veldhoven, van, P.J. ; Barbarin, Y. ; Bente, E.A.J.M. ; Smit, M.K. ; Cade, N.I. ; Kamada, H. ; Satpati, B. ; Trampert, A. / 1.55-μm range InAs/InP (100) quantum dot telecom devices. Nanophotonics for Communication: Materials, Devices, and Systems IV. editor / N.K. Dhar ; A.K. Dutta ; M.S. Islam. Bellingham : SPIE, 2007. pp. 677904-1/10 (Proceedings of SPIE).
@inproceedings{2439b1b76307435da42b8bfefe18fa2b,
title = "1.55-μm range InAs/InP (100) quantum dot telecom devices",
abstract = "Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm2 per QD layer, and low loss of 4.2 cm-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton - biexciton emission around 1.55 µm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems",
author = "R. N{\"o}tzel and S. Anantathanasarn and {Veldhoven, van}, P.J. and Y. Barbarin and E.A.J.M. Bente and M.K. Smit and N.I. Cade and H. Kamada and B. Satpati and A. Trampert",
year = "2007",
doi = "10.1117/12.731341",
language = "English",
isbn = "978-0-8194-6939-7",
series = "Proceedings of SPIE",
publisher = "SPIE",
pages = "677904--1/10",
editor = "N.K. Dhar and A.K. Dutta and M.S. Islam",
booktitle = "Nanophotonics for Communication: Materials, Devices, and Systems IV",
address = "United States",

}

Nötzel, R, Anantathanasarn, S, Veldhoven, van, PJ, Barbarin, Y, Bente, EAJM, Smit, MK, Cade, NI, Kamada, H, Satpati, B & Trampert, A 2007, 1.55-μm range InAs/InP (100) quantum dot telecom devices. in NK Dhar, AK Dutta & MS Islam (eds), Nanophotonics for Communication: Materials, Devices, and Systems IV. Proceedings of SPIE, vol. 6779, SPIE, Bellingham, pp. 677904-1/10, conference; Nanophotonics for communication: materials, devices, and systems IV r 2007, Boston, Massachusetts, USA; 2007-09-10; 2007-09-11, 10/09/07. https://doi.org/10.1117/12.731341

1.55-μm range InAs/InP (100) quantum dot telecom devices. / Nötzel, R.; Anantathanasarn, S.; Veldhoven, van, P.J.; Barbarin, Y.; Bente, E.A.J.M.; Smit, M.K.; Cade, N.I.; Kamada, H.; Satpati, B.; Trampert, A.

Nanophotonics for Communication: Materials, Devices, and Systems IV. ed. / N.K. Dhar; A.K. Dutta; M.S. Islam. Bellingham : SPIE, 2007. p. 677904-1/10 (Proceedings of SPIE; Vol. 6779).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - 1.55-μm range InAs/InP (100) quantum dot telecom devices

AU - Nötzel, R.

AU - Anantathanasarn, S.

AU - Veldhoven, van, P.J.

AU - Barbarin, Y.

AU - Bente, E.A.J.M.

AU - Smit, M.K.

AU - Cade, N.I.

AU - Kamada, H.

AU - Satpati, B.

AU - Trampert, A.

PY - 2007

Y1 - 2007

N2 - Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm2 per QD layer, and low loss of 4.2 cm-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton - biexciton emission around 1.55 µm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems

AB - Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm2 per QD layer, and low loss of 4.2 cm-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton - biexciton emission around 1.55 µm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems

U2 - 10.1117/12.731341

DO - 10.1117/12.731341

M3 - Conference contribution

SN - 978-0-8194-6939-7

T3 - Proceedings of SPIE

SP - 677904-1/10

BT - Nanophotonics for Communication: Materials, Devices, and Systems IV

A2 - Dhar, N.K.

A2 - Dutta, A.K.

A2 - Islam, M.S.

PB - SPIE

CY - Bellingham

ER -

Nötzel R, Anantathanasarn S, Veldhoven, van PJ, Barbarin Y, Bente EAJM, Smit MK et al. 1.55-μm range InAs/InP (100) quantum dot telecom devices. In Dhar NK, Dutta AK, Islam MS, editors, Nanophotonics for Communication: Materials, Devices, and Systems IV. Bellingham: SPIE. 2007. p. 677904-1/10. (Proceedings of SPIE). https://doi.org/10.1117/12.731341