1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy

H. Wang, J. Yuan, P.J. Veldhoven, van, R. Nötzel

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Abstract

Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a certain base size. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g., InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth. Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-µm telecom wavelength region and their implementation in photonic integrated circuits. © 2010 Copyright SPIE - The International Society for Optical Engineering. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 76100N
Original languageEnglish
Title of host publicationProceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA
Place of PublicationSan Francisco, USA
Pages76100N-
DOIs
Publication statusPublished - 2010
Eventconference; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII -
Duration: 1 Jan 2010 → …

Publication series

NameProceedings of SPIE
Volume7610
ISSN (Print)0277-786X

Conference

Conferenceconference; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Period1/01/10 → …
OtherQuantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII

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    Wang, H., Yuan, J., Veldhoven, van, P. J., & Nötzel, R. (2010). 1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. In Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA (pp. 76100N-). (Proceedings of SPIE; Vol. 7610).. https://doi.org/10.1117/12.852205