1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy

H. Wang; J. Yuan; P.J. Veldhoven, van; R. Nötzel

doi:10.1117/12.852205

1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy

H. Wang, J. Yuan, P.J. Veldhoven, van, R. Nötzel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a certain base size. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g., InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth. Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-µm telecom wavelength region and their implementation in photonic integrated circuits. © 2010 Copyright SPIE - The International Society for Optical Engineering. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 76100N

Original language	English
Title of host publication	Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA
Place of Publication	San Francisco, USA
Pages	76100N-
DOIs	https://doi.org/10.1117/12.852205
Publication status	Published - 2010
Event	conference; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII - Duration: 1 Jan 2010 → …

Publication series

Name	Proceedings of SPIE
Volume	7610
ISSN (Print)	0277-786X

Conference

Conference	conference; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Period	1/01/10 → …
Other	Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII

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Wang, H., Yuan, J., Veldhoven, van, P. J., & Nötzel, R. (2010). 1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. In Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA (pp. 76100N-). (Proceedings of SPIE; Vol. 7610).. https://doi.org/10.1117/12.852205

Wang, H. ; Yuan, J. ; Veldhoven, van, P.J. ; Nötzel, R. / 1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA. San Francisco, USA, 2010. pp. 76100N- (Proceedings of SPIE).

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abstract = "Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a certain base size. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g., InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth. Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-µm telecom wavelength region and their implementation in photonic integrated circuits. {\textcopyright} 2010 Copyright SPIE - The International Society for Optical Engineering. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 76100N",

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Wang, H, Yuan, J, Veldhoven, van, PJ & Nötzel, R 2010, 1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. in Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA. Proceedings of SPIE, vol. 7610, San Francisco, USA, pp. 76100N-, conference; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 1/01/10. https://doi.org/10.1117/12.852205

1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. / Wang, H.; Yuan, J.; Veldhoven, van, P.J.; Nötzel, R.

Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA. San Francisco, USA, 2010. p. 76100N- (Proceedings of SPIE; Vol. 7610).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a certain base size. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g., InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth. Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-µm telecom wavelength region and their implementation in photonic integrated circuits. © 2010 Copyright SPIE - The International Society for Optical Engineering. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 76100N

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Wang H, Yuan J, Veldhoven, van PJ, Nötzel R. 1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy. In Proceedings of the 7th Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling, 24 january 2010, San Francisco, California, USA. San Francisco, USA. 2010. p. 76100N-. (Proceedings of SPIE). https://doi.org/10.1117/12.852205