1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

Y. Barbarin; S. Anantathanasarn; E.A.J.M. Bente; Y.S. Oei; M.K. Smit; R. Nötzel

doi:10.1109/LPT.2006.887382

1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

Y. Barbarin, S. Anantathanasarn, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, R. Nötzel

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Abstract

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Pérot and ring lasers, lasing in the 1.55-µm wavelength range and employing narrow deeply etched ridge waveguides (1.65 µm width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used

Original language	English
Pages (from-to)	2644-2646
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	24
DOIs	https://doi.org/10.1109/LPT.2006.887382
Publication status	Published - 2006

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title = "1.55-µm range InAs-InP (100) quantum-dot Fabry-P{\'e}rot and ring lasers using narrow deeply etched ridge waveguides",

abstract = "In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-P{\'e}rot and ring lasers, lasing in the 1.55-µm wavelength range and employing narrow deeply etched ridge waveguides (1.65 µm width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used",

author = "Y. Barbarin and S. Anantathanasarn and E.A.J.M. Bente and Y.S. Oei and M.K. Smit and R. N{\"o}tzel",

year = "2006",

doi = "10.1109/LPT.2006.887382",

language = "English",

volume = "18",

pages = "2644--2646",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "24",

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TY - JOUR

T1 - 1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

AU - Barbarin, Y.

AU - Anantathanasarn, S.

AU - Bente, E.A.J.M.

AU - Oei, Y.S.

AU - Smit, M.K.

AU - Nötzel, R.

PY - 2006

Y1 - 2006

N2 - In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Pérot and ring lasers, lasing in the 1.55-µm wavelength range and employing narrow deeply etched ridge waveguides (1.65 µm width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used

AB - In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Pérot and ring lasers, lasing in the 1.55-µm wavelength range and employing narrow deeply etched ridge waveguides (1.65 µm width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used

U2 - 10.1109/LPT.2006.887382

DO - 10.1109/LPT.2006.887382

M3 - Article

VL - 18

SP - 2644

EP - 2646

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 24

ER -

1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

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