1.43 µm InAs bilayer quantum dot lasers on GaAs substrate

L. Li; M. Rossetti; A. Fiore; G. Patriarche

doi:10.1049/el:20060918

1.43 µm InAs bilayer quantum dot lasers on GaAs substrate

L. Li, M. Rossetti, A. Fiore, G. Patriarche

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

21 Citations (Scopus)

Abstract

An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by mol. beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold c.d. is 134 A/cm2. Output power of 23 mW per facet is achieved. [on SciFinder (R)]

Original language	English
Pages (from-to)	638-639
Journal	Electronics Letters
Volume	42
Issue number	11
DOIs	https://doi.org/10.1049/el:20060918
Publication status	Published - 2006

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title = "1.43 µm InAs bilayer quantum dot lasers on GaAs substrate",

abstract = "An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by mol. beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold c.d. is 134 A/cm2. Output power of 23 mW per facet is achieved. [on SciFinder (R)]",

author = "L. Li and M. Rossetti and A. Fiore and G. Patriarche",

year = "2006",

doi = "10.1049/el:20060918",

language = "English",

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journal = "Electronics Letters",

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T1 - 1.43 µm InAs bilayer quantum dot lasers on GaAs substrate

AU - Li, L.

AU - Rossetti, M.

AU - Fiore, A.

AU - Patriarche, G.

PY - 2006

Y1 - 2006

N2 - An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by mol. beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold c.d. is 134 A/cm2. Output power of 23 mW per facet is achieved. [on SciFinder (R)]

AB - An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by mol. beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold c.d. is 134 A/cm2. Output power of 23 mW per facet is achieved. [on SciFinder (R)]

U2 - 10.1049/el:20060918

DO - 10.1049/el:20060918

M3 - Article

SN - 0013-5194

VL - 42

SP - 638

EP - 639

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

1.43 µm InAs bilayer quantum dot lasers on GaAs substrate

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