1.43 µm InAs bilayer quantum dot lasers on GaAs substrate

L. Li, M. Rossetti, A. Fiore, G. Patriarche

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)


An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by mol. beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold c.d. is 134 A/cm2. Output power of 23 mW per facet is achieved. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)638-639
JournalElectronics Letters
Issue number11
Publication statusPublished - 2006


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