14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

Kian Huan Tan, Soon F. Yoon, Sascha Fedderwitz, Andreas Stöhr, Wan Khai Loke, Satrio Wicaksono, Tien Khee Ng, Mario Weiß, Artur Poloczek, Vitaly Rymanov, Ardhendu Patra, Eduward Tangdiongga, Dieter Jäger

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

Original languageEnglish
Pages (from-to)590-592
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
Publication statusPublished - 30 Apr 2009

Keywords

  • 1.3-μm PDs
  • Dilute-nitride-based photodetectors (PDs)
  • GaNAsSb
  • Molecular beam epitaxy (MBE)

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