1310nm high-capacity waveband switch node for flat optical data center networks

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Abstract

Waveband switching capability of 1310nm SOA-based scalable and flow-controlled optical switching node is assessed. Experimental results show nanoseconds operation of 64-port switch node at 100 Gb/s WDM (4×25Gb/s) with >14dB dynamic range and <1.8dB penalty.
Original languageEnglish
Title of host publication2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 3-7 July 2016, Niigata, Japan
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-3
Publication statusPublished - Aug 2016
Event21st OptoElectronics and Communications Conference (OECC) / 2016 International Conference on Photonics in Switching (PS), July 3-7, 2016, Niigata, Japan - Niigata Convention Center, Niigata, Japan
Duration: 3 Jul 20167 Jul 2016

Conference

Conference21st OptoElectronics and Communications Conference (OECC) / 2016 International Conference on Photonics in Switching (PS), July 3-7, 2016, Niigata, Japan
Abbreviated titleOECC/PS 2016
CountryJapan
CityNiigata
Period3/07/167/07/16

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Miao, W., de Waardt, H., & Calabretta, N. (2016). 1310nm high-capacity waveband switch node for flat optical data center networks. In 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 3-7 July 2016, Niigata, Japan (pp. 1-3). [WF3-4] Piscataway: Institute of Electrical and Electronics Engineers.