TY - JOUR
T1 - 1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology
AU - Hazan, Joel
AU - Andreou, Stefanos
AU - Pustakhod, Dzmitry
AU - Kleijn, Steven
AU - Williams, Kevin A.
AU - Bente, Erwin A.J.M.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers and passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate and optimized for butt-joint reflections is investigated. Material performance were assessed from measurements of broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm2 per well. Characteristic temperatures of T0 = 75 K and T1 = 294 K were obtained. A compact model description of the SOA, suitable for the design of PICs and rate equation analysis, was applied to parametrize the unsaturated gain measurements. Current injection efficiency of 0.65, transparency carrier density of 0.57 1018 cm−3, and free carrier absorption losses up to 15 cm−1 were extracted from fitting the data. The model is verified with measurements of optical gain saturation. A modal gain of 15 dB for a 600 μm long narrow ridge SOA leads to output saturation power higher than 30 mW at 7 kA/cm2. This building block contributes to the development of an InP monolithic integration technology in the 1300 nm range, which can enable the use of photonic integrated circuits in many kind of applications.
AB - In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers and passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate and optimized for butt-joint reflections is investigated. Material performance were assessed from measurements of broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm2 per well. Characteristic temperatures of T0 = 75 K and T1 = 294 K were obtained. A compact model description of the SOA, suitable for the design of PICs and rate equation analysis, was applied to parametrize the unsaturated gain measurements. Current injection efficiency of 0.65, transparency carrier density of 0.57 1018 cm−3, and free carrier absorption losses up to 15 cm−1 were extracted from fitting the data. The model is verified with measurements of optical gain saturation. A modal gain of 15 dB for a 600 μm long narrow ridge SOA leads to output saturation power higher than 30 mW at 7 kA/cm2. This building block contributes to the development of an InP monolithic integration technology in the 1300 nm range, which can enable the use of photonic integrated circuits in many kind of applications.
KW - InP
KW - monolithic integrated circuits
KW - o-band telecommunications
KW - semicondu- ctor device modeling
KW - semiconductor optical amplifiers
UR - http://www.scopus.com/inward/record.url?scp=85130504924&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2022.3175373
DO - 10.1109/JPHOT.2022.3175373
M3 - Article
SN - 1943-0655
VL - 14
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 3
M1 - 1532311
ER -