We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3- m wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of 0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3- µm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate = 10sup12 transmission of 10-Gb Ethernet data at 1.3- µm wavelength is successfully demonstrated.
Fedderwitz, S., Stöhr, A., Tan, K. H., Yoon, S. F., Weiss, M., Poloczek, A., ... Jaeger, D. (2009). 1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links. IEEE Photonics Technology Letters, 21(13), 911-913. https://doi.org/10.1109/LPT.2009.2020302