1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

S. Fedderwitz, A. Stöhr, K.H. Tan, S.F. Yoon, M. Weiss, A. Poloczek, W.K. Loke, S. Wicaksono, T.K. Ng, V. Rymanov, A. Patra, E. Tangdiongga, D. Jaeger

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3- m wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of 0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3- µm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate = 10sup12 transmission of 10-Gb Ethernet data at 1.3- µm wavelength is successfully demonstrated.
Original languageEnglish
Pages (from-to)911-913
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number13
DOIs
Publication statusPublished - 2009

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    Fedderwitz, S., Stöhr, A., Tan, K. H., Yoon, S. F., Weiss, M., Poloczek, A., ... Jaeger, D. (2009). 1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links. IEEE Photonics Technology Letters, 21(13), 911-913. https://doi.org/10.1109/LPT.2009.2020302