1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

Joel Hazan; Stefanos Andreou; Dzmitry Pustakhod; Steven Kleijn; Kevin Williams; Erwin Bente

doi:10.1109/ISLC51662.2021.9615686

1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

Joel Hazan, Stefanos Andreou, Dzmitry Pustakhod, Steven Kleijn, Kevin Williams, Erwin Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.

Original language	English
Title of host publication	2021 27th International Semiconductor Laser Conference (ISLC)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-6654-4133-9
DOIs	https://doi.org/10.1109/ISLC51662.2021.9615686
Publication status	Published - 26 Nov 2021
Event	27th International Semiconductor Laser Conference, ISLC 2021 - Potsdam, Germany Duration: 10 Oct 2021 → 14 Oct 2021

Conference

Conference	27th International Semiconductor Laser Conference, ISLC 2021
Country/Territory	Germany
City	Potsdam
Period	10/10/21 → 14/10/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Funding

This work is part of the research program ‘An integrated Optical Coherence Tomography system for medical imaging at 1300nm’ with project number 16251, which is (partly) financed by the Dutch Research Council (NWO).

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10.1109/ISLC51662.2021.9615686

Cite this

Hazan, J., Andreou, S., Pustakhod, D., Kleijn, S., Williams, K., & Bente, E. (2021). 1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology. In 2021 27th International Semiconductor Laser Conference (ISLC) Article 9615686 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISLC51662.2021.9615686

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abstract = "We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\textbackslash{}passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.",

author = "Joel Hazan and Stefanos Andreou and Dzmitry Pustakhod and Steven Kleijn and Kevin Williams and Erwin Bente",

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Hazan, J, Andreou, S, Pustakhod, D, Kleijn, S, Williams, K & Bente, E 2021, 1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology. in 2021 27th International Semiconductor Laser Conference (ISLC)., 9615686, Institute of Electrical and Electronics Engineers, 27th International Semiconductor Laser Conference, ISLC 2021, Potsdam, Germany, 10/10/21. https://doi.org/10.1109/ISLC51662.2021.9615686

1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology. / Hazan, Joel; Andreou, Stefanos; Pustakhod, Dzmitry et al.
2021 27th International Semiconductor Laser Conference (ISLC). Institute of Electrical and Electronics Engineers, 2021. 9615686.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Williams, Kevin

AU - Bente, Erwin

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1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

Abstract

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Funding

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