11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

M.C.J.C.M. Krämer; F. Karouta; J.J.M. Kwaspen; M. Rudzinski; P.K. Larsen; E.M. Suiker; A.P. Hek, de; T. Rödle; I. Volokhine; L.M.F. Kaufmann

11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

M.C.J.C.M. Krämer
, F. Karouta
, J.J.M. Kwaspen
, M. Rudzinski
, P.K. Larsen
, E.M. Suiker
, A.P. Hek, de
, T. Rödle
, I. Volokhine
, L.M.F. Kaufmann

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.

Original language	English
Title of host publication	Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)
Place of Publication	Honolulu, Hawaii
Pages	169-179
Publication status	Published - 2008
Event	214th Electrochemical Society Meeting (ECS 2008) - Duration: 12 Oct 2008 → 17 Oct 2008

Conference

Conference	214th Electrochemical Society Meeting (ECS 2008)
Period	12/10/08 → 17/10/08

Cite this

@inproceedings{d5e6d0ffea684adba590f545463c4a27,

title = "11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS",

abstract = "In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.",

author = "M.C.J.C.M. Kr{\"a}mer and F. Karouta and J.J.M. Kwaspen and M. Rudzinski and P.K. Larsen and E.M. Suiker and \{Hek, de\}, A.P. and T. R{\"o}dle and I. Volokhine and L.M.F. Kaufmann",

year = "2008",

language = "English",

isbn = "978-1-56677-653-0",

pages = "169--179",

booktitle = "Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)",

note = "214th Electrochemical Society Meeting (ECS 2008) ; Conference date: 12-10-2008 Through 17-10-2008",

}

Krämer, MCJCM, Karouta, F, Kwaspen, JJM, Rudzinski, M, Larsen, PK, Suiker, EM, Hek, de, AP, Rödle, T, Volokhine, I & Kaufmann, LMF 2008, 11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS. in Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7). Honolulu, Hawaii, pp. 169-179, 214th Electrochemical Society Meeting (ECS 2008), 12/10/08.

TY - GEN

T1 - 11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

AU - Krämer, M.C.J.C.M.

AU - Karouta, F.

AU - Kwaspen, J.J.M.

AU - Rudzinski, M.

AU - Larsen, P.K.

AU - Suiker, E.M.

AU - Hek, de, A.P.

AU - Rödle, T.

AU - Volokhine, I.

AU - Kaufmann, L.M.F.

PY - 2008

Y1 - 2008

N2 - In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.

AB - In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.

M3 - Conference contribution

SN - 978-1-56677-653-0

SP - 169

EP - 179

BT - Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)

CY - Honolulu, Hawaii

T2 - 214th Electrochemical Society Meeting (ECS 2008)

Y2 - 12 October 2008 through 17 October 2008

ER -

11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

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