11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

M.C.J.C.M. Krämer, F. Karouta, J.J.M. Kwaspen, M. Rudzinski, P.K. Larsen, E.M. Suiker, A.P. Hek, de, T. Rödle, I. Volokhine, L.M.F. Kaufmann

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Abstract

In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.
Original languageEnglish
Title of host publicationProceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)
Place of PublicationHonolulu, Hawaii
Pages169-179
Publication statusPublished - 2008
Event214th Electrochemical Society Meeting (ECS 2008) -
Duration: 12 Oct 200817 Oct 2008

Conference

Conference214th Electrochemical Society Meeting (ECS 2008)
Period12/10/0817/10/08

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Krämer, M. C. J. C. M., Karouta, F., Kwaspen, J. J. M., Rudzinski, M., Larsen, P. K., Suiker, E. M., ... Kaufmann, L. M. F. (2008). 11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS. In Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7) (pp. 169-179). Honolulu, Hawaii.