In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates.
First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with
undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.
|Title of host publication||Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)|
|Place of Publication||Honolulu, Hawaii|
|Publication status||Published - 2008|
|Event||214th Electrochemical Society Meeting (ECS 2008) - |
Duration: 12 Oct 2008 → 17 Oct 2008
|Conference||214th Electrochemical Society Meeting (ECS 2008)|
|Period||12/10/08 → 17/10/08|