Abstract
In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates.
First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with
undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.
Original language | English |
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Title of host publication | Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7) |
Place of Publication | Honolulu, Hawaii |
Pages | 169-179 |
Publication status | Published - 2008 |
Event | 214th Electrochemical Society Meeting (ECS 2008) - Duration: 12 Oct 2008 → 17 Oct 2008 |
Conference
Conference | 214th Electrochemical Society Meeting (ECS 2008) |
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Period | 12/10/08 → 17/10/08 |