10-GHz all-optical gate based on a III-V/SOI microdisk

R. Kumar; L. Liu; G. Roelkens; E.J. Geluk; T. Vries, de; F. Karouta; P. Regreny; D. Thourhout, Van; R.G.F. Baets; G. Morthier

doi:10.1109/LPT.2010.2048895

10-GHz all-optical gate based on a III-V/SOI microdisk

R. Kumar, L. Liu, G. Roelkens, E.J. Geluk, T. Vries, de, F. Karouta, P. Regreny, D. Thourhout, Van, R.G.F. Baets, G. Morthier

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

17 Citations (Scopus)

72 Downloads (Pure)

Abstract

We demonstrate an ultra-fast and low power all-optical gate in pump-probe configuration based on free carrier induced refractive index modulation in a 5µm radius InP/InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.

Original language	English
Pages (from-to)	981-983
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	13
DOIs	https://doi.org/10.1109/LPT.2010.2048895
Publication status	Published - 2010

Access to Document

10.1109/LPT.2010.2048895

Metis234287Final published version, 256 KB

Cite this

@article{1e989f9f7e9446ae9513f1490e251651,

title = "10-GHz all-optical gate based on a III-V/SOI microdisk",

abstract = "We demonstrate an ultra-fast and low power all-optical gate in pump-probe configuration based on free carrier induced refractive index modulation in a 5µm radius InP/InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.",

author = "R. Kumar and L. Liu and G. Roelkens and E.J. Geluk and {Vries, de}, T. and F. Karouta and P. Regreny and {Thourhout, Van}, D. and R.G.F. Baets and G. Morthier",

year = "2010",

doi = "10.1109/LPT.2010.2048895",

language = "English",

volume = "22",

pages = "981--983",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "13",

}

TY - JOUR

T1 - 10-GHz all-optical gate based on a III-V/SOI microdisk

AU - Kumar, R.

AU - Liu, L.

AU - Roelkens, G.

AU - Geluk, E.J.

AU - Vries, de, T.

AU - Karouta, F.

AU - Regreny, P.

AU - Thourhout, Van, D.

AU - Baets, R.G.F.

AU - Morthier, G.

PY - 2010

Y1 - 2010

N2 - We demonstrate an ultra-fast and low power all-optical gate in pump-probe configuration based on free carrier induced refractive index modulation in a 5µm radius InP/InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.

AB - We demonstrate an ultra-fast and low power all-optical gate in pump-probe configuration based on free carrier induced refractive index modulation in a 5µm radius InP/InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.

U2 - 10.1109/LPT.2010.2048895

DO - 10.1109/LPT.2010.2048895

M3 - Article

SN - 1041-1135

VL - 22

SP - 981

EP - 983

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 13

ER -

10-GHz all-optical gate based on a III-V/SOI microdisk

Abstract

Access to Document

Fingerprint

Cite this