-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

H. Chen; P. Verheyen; P. de Heyn; G. Lepage; J. de Coster; W. Yao; L. Shen; G.C. Roelkens; J. van Campenhout

doi:10.1364/OE.24.004622

-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

H. Chen, P. Verheyen, P. de Heyn, G. Lepage, J. de Coster, W. Yao, L. Shen, G.C. Roelkens, J. van Campenhout

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

177 Citations (Scopus)

531 Downloads (Pure)

Abstract

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

Original language	English
Pages (from-to)	4622-4631
Journal	Optics Express
Volume	24
Issue number	5
DOIs	https://doi.org/10.1364/OE.24.004622
Publication status	Published - 24 Feb 2016

Access to Document

10.1364/OE.24.004622

Ge_56Gb_IMEC_OE_pubFinal published version, 3.1 MB

Cite this

@article{d446ab115f7b43c8a70cb1f185de0b73,

title = "-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond",

abstract = "We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.",

author = "H. Chen and P. Verheyen and {de Heyn}, P. and G. Lepage and {de Coster}, J. and W. Yao and L. Shen and G.C. Roelkens and {van Campenhout}, J.",

year = "2016",

month = feb,

day = "24",

doi = "10.1364/OE.24.004622",

language = "English",

volume = "24",

pages = "4622--4631",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "5",

}

TY - JOUR

T1 - -1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

AU - Chen, H.

AU - Verheyen, P.

AU - de Heyn, P.

AU - Lepage, G.

AU - de Coster, J.

AU - Yao, W.

AU - Shen, L.

AU - Roelkens, G.C.

AU - van Campenhout, J.

PY - 2016/2/24

Y1 - 2016/2/24

N2 - We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

AB - We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

U2 - 10.1364/OE.24.004622

DO - 10.1364/OE.24.004622

M3 - Article

C2 - 29092290

SN - 1094-4087

VL - 24

SP - 4622

EP - 4631

JO - Optics Express

JF - Optics Express

IS - 5

ER -

-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Abstract

Access to Document

Fingerprint

Cite this