0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

M. Acar; M.P. Heijden, van der; D.M.W. Leenaerts

doi:10.1109/RFIC.2012.6242282

0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

M. Acar, M.P. Heijden, van der, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ˜30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	283-286
ISBN (Print)	978-1-4673-0416-0
DOIs	https://doi.org/10.1109/RFIC.2012.6242282
Publication status	Published - 2012
Event	2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012) - Montréal, Canada Duration: 17 Jun 2012 → 19 Jun 2012

Conference

Conference	2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)
Abbreviated title	RFIC 2012
Country/Territory	Canada
City	Montréal
Period	17/06/12 → 19/06/12

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10.1109/RFIC.2012.6242282

Cite this

Acar, M., Heijden, van der, M. P., & Leenaerts, D. M. W. (2012). 0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications. In Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec (pp. 283-286). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RFIC.2012.6242282

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title = "0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications",

abstract = "In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ˜30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.",

author = "M. Acar and {Heijden, van der}, M.P. and D.M.W. Leenaerts",

year = "2012",

doi = "10.1109/RFIC.2012.6242282",

language = "English",

isbn = "978-1-4673-0416-0",

pages = "283--286",

booktitle = "Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012), RFIC 2012 ; Conference date: 17-06-2012 Through 19-06-2012",

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Acar, M, Heijden, van der, MP & Leenaerts, DMW 2012, 0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications. in Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec. Institute of Electrical and Electronics Engineers, Piscataway, pp. 283-286, 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012), Montréal, Canada, 17/06/12. https://doi.org/10.1109/RFIC.2012.6242282

0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications. / Acar, M.; Heijden, van der, M.P.; Leenaerts, D.M.W.

Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec. Piscataway : Institute of Electrical and Electronics Engineers, 2012. p. 283-286.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ˜30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

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BT - Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec

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Acar M, Heijden, van der MP, Leenaerts DMW. 0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications. In Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec. Piscataway: Institute of Electrical and Electronics Engineers. 2012. p. 283-286 https://doi.org/10.1109/RFIC.2012.6242282

0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

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