0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

M. Acar, M.P. Heijden, van der, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)

Abstract

In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ˜30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages283-286
ISBN (Print)978-1-4673-0416-0
DOIs
Publication statusPublished - 2012
Event2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012) - Montréal, Canada
Duration: 17 Jun 201219 Jun 2012

Conference

Conference2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)
Abbreviated titleRFIC 2012
CountryCanada
CityMontréal
Period17/06/1219/06/12

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