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Personal profile

Quote

“Atomic scale processing using plasmas and atomic layer deposition has the wonderful mix of requiring more fundamental understanding and being industrially relevant.”

Research profile

Harm Knoops is a part-time Assistant Professor in the Department of Applied Physics, Plasma & Materials Processing at Eindhoven University of Technology (TU/e). In addition, Knoops is an Atomic Scale Segment Specialist for Oxford Instruments Plasma Technology (OIPT). His current work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD. His main goals are to improve and advance ALD processes and applications for Oxford Instruments and its customers. His recent advances in applying RF substrate biasing during plasma ALD and the growth of 2D-MoS2 by plasma ALD have been well-received by the field.  

Furthermore, Knoops aims at a better understanding and utilization of plasma processes for plasma ALD and related applications and processes and is also involved in understanding growth of 2D materials and atomic layer etching (ALE). Knoops has 40 published papers in peer-reviewed journals with 9 papers as first author, 1 of which is a review paper. He has an H-index of 22 (Web of Science www.isiknowledge.com/wos) and 1126 citations in peer-reviewed journals.

Academic background

Harm Knoops obtained his PhD degree in Applied Physics at Eindhoven University of Technology in 2011 with his thesis titled Atomic Layer Deposition: From Reaction Mechanisms to 3D-integrated Micro-batteries. In a work visit during his PhD to Argonne National Labs (USA), he focused on loss processes in ozone-based ALD and linked these to a similar mechanism in plasma ALD. Prior to joining OIPT in the beginning of 2014, he spent several years in post-doc positions related to plasma processing, solar cells and ALD. After his postdoc and while working at OIPT and TU/e he has focused on advancing the deposition and understanding in the ALD of nitrides which led to improvement of silicon nitride ALD and the understanding of redeposition effects in plasma ALD.

External positions

Atomic Scale Segment Specialist, Oxford Instruments Plasma Technology

1 Jan 2014 → …

Fingerprint Dive into the research topics where Harm C.M. Knoops is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 16 Similar Profiles
Atomic layer deposition Chemical Compounds
atomic layer epitaxy Physics & Astronomy
Plasmas Engineering & Materials Science
Plasma deposition Engineering & Materials Science
Thin films Engineering & Materials Science
Silicon nitride Engineering & Materials Science
ellipsometry Physics & Astronomy
electric batteries Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 2005 2019

68 Citations (Scopus)
128 Downloads (Pure)

Atomic layer deposition for nanostructured Li-ion batteries

Knoops, H. C. M., Donders, M. E., Sanden, van de, M. C. M., Notten, P. H. L. & Kessels, W. M. M., 2012, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films. 30, 1, p. 010801-1/10 10 p., 010801.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Atomic layer deposition
atomic layer epitaxy
electric batteries
ions
Electrodes
49 Citations (Scopus)
1 Downloads (Pure)

Surface loss in ozone-based atomic layer deposition processes

Knoops, H. C. M., Elam, J. W., Libera, J. A. & Kessels, W. M. M., 2011, In : Chemistry of Materials. 23, 9, p. 2381-2387

Research output: Contribution to journalArticleAcademicpeer-review

Atomic layer deposition
Ozone
Aspect ratio
Mass spectrometers
Film growth
111 Citations (Scopus)
300 Downloads (Pure)

Conformality of plasma-assisted ALD: physical processes and modeling

Knoops, H. C. M., Langereis, E., Sanden, van de, M. C. M. & Kessels, W. M. M., 2010, In : Journal of the Electrochemical Society. 157, 12, p. G241-G249

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Atomic layer deposition
Aspect ratio
Plasmas
Metals
Oxides
32 Citations (Scopus)
256 Downloads (Pure)

Redeposition in plasma-assisted atomic layer deposition : silicon nitride film quality ruled by the gas residence time

Knoops, H. C. M., de Peuter, K. & Kessels, W. M. M., 2015, In : Applied Physics Letters. 107, p. 014102 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
atomic layer epitaxy
silicon nitrides
gases
reaction products
transistors
5 Citations (Scopus)
2 Downloads (Pure)
atomic layer epitaxy
ions
energy
dosage
energy distribution

Courses

Press / Media

Student theses

Atomic layer deposition of Pt and its combination with electron beam induced deposition for the fabrication of nanostructures

Author: Mackus, A., 30 Apr 2009

Supervisor: Knoops, H. (Supervisor 1), Mulders, J. (External coach) & Kessels, W. (Supervisor 2)

Student thesis: Master

File

Development and understanding of a plasma-assisted atomic layer deposition process for silicon nitride

Author: Braeken, E., 31 Aug 2013

Supervisor: Knoops, H. (Supervisor 1), Potts, S. (Supervisor 2) & Kessels, W. (Supervisor 2)

Student thesis: Master

File

Low temperature plasma-deposited aluminium-doped zinc oxide for CIGS solar cells

Author: Mittal, A., 31 Oct 2013

Supervisor: Knoops, H. (Supervisor 1), Sharma, K. (Supervisor 2) & Creatore, M. (Supervisor 2)

Student thesis: Master

Low-temperature plasma-deposited aluminum-doped zinc oxide for CIGS solar cells: towards better material properties and solar-cell efficiencies

Author: Goertz, J., 2013

Supervisor: Knoops, H. (Supervisor 1), Sharma, K. (Supervisor 2) & Creatore, M. (Supervisor 2)

Student thesis: Bachelor

File

Mechanisms controlling silicon nitride growth by plasma-enhanced atomic layer deposition

Author: de Peuter, K., 31 Mar 2014

Supervisor: Knoops, H. (Supervisor 1), Ande, C. (Supervisor 2) & Kessels, W. (Supervisor 2)

Student thesis: Master

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