Personal profile

Quote

“Atomic scale processing using plasmas and atomic layer deposition has the wonderful mix of requiring more fundamental understanding and being industrially relevant.”

Research profile

Harm Knoops is a part-time Assistant Professor in the Department of Applied Physics, Plasma & Materials Processing at Eindhoven University of Technology (TU/e). In addition, Knoops is an Atomic Scale Segment Specialist for Oxford Instruments Plasma Technology (OIPT). His current work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD. His main goals are to improve and advance ALD processes and applications for Oxford Instruments and its customers. His recent advances in applying RF substrate biasing during plasma ALD and the growth of 2D-MoS2 by plasma ALD have been well-received by the field.  

Furthermore, Knoops aims at a better understanding and utilization of plasma processes for plasma ALD and related applications and processes and is also involved in understanding growth of 2D materials and atomic layer etching (ALE). Knoops has 40 published papers in peer-reviewed journals with 9 papers as first author, 1 of which is a review paper. He has an H-index of 22 (Web of Science www.isiknowledge.com/wos) and 1126 citations in peer-reviewed journals.

Academic background

Harm Knoops obtained his PhD degree in Applied Physics at Eindhoven University of Technology in 2011 with his thesis titled Atomic Layer Deposition: From Reaction Mechanisms to 3D-integrated Micro-batteries. In a work visit during his PhD to Argonne National Labs (USA), he focused on loss processes in ozone-based ALD and linked these to a similar mechanism in plasma ALD. Prior to joining OIPT in the beginning of 2014, he spent several years in post-doc positions related to plasma processing, solar cells and ALD. After his postdoc and while working at OIPT and TU/e he has focused on advancing the deposition and understanding in the ALD of nitrides which led to improvement of silicon nitride ALD and the understanding of redeposition effects in plasma ALD.

Expertise related to UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy

External positions

Atomic Scale Segment Specialist, Oxford Instruments Plasma Technology

1 Jan 2014 → …

Fingerprint

Dive into the research topics where Harm C.M. Knoops is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
  • 1 Similar Profiles

Collaborations and top research areas from the last five years

Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
  • Best ALD paper Award

    Knoops, H. (Recipient), 7 Jul 2022

    Prize: OtherCareer, activity or publication related prizes (lifetime, best paper, poster etc.)Scientific