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Personal profile
Academic background
Aleksandr Zozulia was born in Scherbinka, Moscow region, Russia. In 2018 he graduated from Bauman Moscow State Technical University with specialist degree (360 ECTS) in specialization "Optical and optoelectronic devices and systems". From 2016 till 2018 he worked as optical engineer in "Cyclone JSC Research Institute", Moscow, Russia. From 2018 till 2020 he pursued MS degree in Skolkovo Institute of Science and Technology, where he also did research in Laboratory of Plasmonics and Nanooptics, with project related to fabrication of modulator on SOI based on hybrid edge plasmons in ITO. In 2020 he passed internship in cleanroom of Royal Holloway University of London, UK, where he took part in project related to fabrication of THz detector based on 2D electon gas in GaAs.
Since July 2020 Aleksandr is PhD student in Photonic Integrtion group, under supervision of Yuqing Jiao, and he works on project "High-speed directly modulated lasers on IMOS".
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education/Academic qualification
Technology, Master, High-speed intensity modulator on SOI based on hybrid plasmons in ITO, Skolkovo Institute of Science and Technology
1 Sept 2018 → 20 Jun 2020
Award Date: 20 Jun 2020
Technology, Certificate/Diploma of Higher Education , Mid-IR zoom lens for observation optoelectronic device, Bauman Moscow State Technical University
1 Sept 2012 → 19 Jun 2018
Award Date: 19 Jun 2018
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Collaborations and top research areas from the last five years
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C-band directly modulated lasers with tunable photon-photon resonance in InP membrane
Zozulia, A. (Corresponding author), Schatz, R., Rihani, S., Berry, G., Williams, K. A. & Jiao, Y., Dec 2024, In: IEEE Journal of Quantum Electronics. 60, 6, 12 p., 10706920.Research output: Contribution to journal › Article › Academic › peer-review
Open AccessFile70 Downloads (Pure) -
Efficient heat sink by ultrathin BCB bonding for InP membrane lasers
Zozulia, A. (Corresponding author), de Vries, T., Wang, Y., Rihani, S., Berry, G., Williams, K. A. & Jiao, Y., 1 Apr 2024, In: Japanese Journal of Applied Physics. 63, 4, 8 p., 04SP78.Research output: Contribution to journal › Article › Academic › peer-review
Open AccessFile5 Citations (Scopus)36 Downloads (Pure) -
High-Precision Mapping and Analysis of Wafer-Scale Distortions in InP Membranes to Si 3D Integration
Abdi, S. (Corresponding author), Zozulia, A., Bolk, J., Geluk, E. J., Williams, K. & Jiao, Y., 2024, In: IEEE Access. 12, p. 92215-92226 12 p., 10577983.Research output: Contribution to journal › Article › Academic › peer-review
Open AccessFile1 Citation (Scopus)40 Downloads (Pure) -
High-speed InP membrane devices for optical communication
Zozulia, A., 24 Oct 2024, Eindhoven: Eindhoven University of Technology. 191 p.Research output: Thesis › Phd Thesis 1 (Research TU/e / Graduation TU/e)
Open AccessFile371 Downloads (Pure) -
Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography
Zozulia, A. (Corresponding author), Bolk, J., van Veldhoven, P. J., Nazarikov, G., Pogoretskiy , V. G., Rihani, S., Berry, G., Williams, K. A. & Jiao, Y., Jun 2024, In: Micro and Nano Engineering. 23, 9 p., 100258.Research output: Contribution to journal › Article › Academic › peer-review
Open AccessFile2 Citations (Scopus)44 Downloads (Pure)