Semiconductor Nanostructures and Impurities

  • Groene Loper 19, Flux

    5612 AZ Eindhoven


  • P.O. Box 513, Department of Applied Physics

    5600 MB Eindhoven


Organization profile

Organisational profile

Individual semiconductor nanostructures and single impurities are offering interesting options to achieve and explore the ultimate limits in device miniaturization. Therefore we study the formation and electro-optic properties of individual semiconductor nano objects such as quantum dots, quantum rings and single impurities. To this end scanning probe techniques and atom probe tomography are used to determine the true 3D structure of various semiconductor nanostructures. By this we aim to understand and control their formation during growth and to link their structure to the electro-optic properties that we determine for instance by confocal microscopy. Scanning probe microscopy is furthermore used to explore and manipulate single (magnetic) impurities in a semiconductor material. This work has allowed for a deep understanding of quantum mechanical aspects that determine the properties of a whole range of impurities and defects in semiconductors.

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Research Output 2000 2019

1 Citation (Scopus)

Bottom-up grown 2D InSb nanostructures

Gazibegovic, S., Badawy, G., Buckers, T. L. J., Leubner, P., Shen, J., de Vries, F. K., Koelling, S., Kouwenhoven, L. P., Verheijen, M. A. & Bakkers, E. P. A. M., 1 Jan 2019, (Accepted/In press) In : Advanced Materials. 1808181

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
Electron gas
Carrier mobility
4 Citations (Scopus)

Anti-stiction coating for mechanically tunable photonic crystal devices

Petruzzella, M., Zobenica, Cotrufo, M., Zardetto, V., Mameli, A., Pagliano, F., Koelling, S., Van Otten, F. W. M., Roozeboom, F., Kessels, W. M. M., van der Heijden, R. W. & Fiore, A., 19 Feb 2018, In : Optics Express. 26, 4, p. 3882-3891 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
atomic layer epitaxy
frequency modulation
3 Citations (Scopus)

Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires

Albani, M., Assali, S., Verheijen, M. A., Koelling, S., Bergamaschini, R., Pezzoli, F., Bakkers, E. P. A. M. & Miglio, L., 21 Apr 2018, In : Nanoscale. 10, 15, p. 7250-7256 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Electron diffraction
Finite element method
X rays