Semiconductor Nanostructures and Impurities

  • Groene Loper 19, Flux

    5612 AZ Eindhoven

    Netherlands

  • P.O. Box 513, Department of Applied Physics

    5600 MB Eindhoven

    Netherlands

Organization profile

Organisational profile

Individual semiconductor nanostructures and single impurities are offering interesting options to achieve and explore the ultimate limits in device miniaturization. Therefore we study the formation and electro-optic properties of individual semiconductor nano objects such as quantum dots, quantum rings and single impurities. To this end scanning probe techniques and atom probe tomography are used to determine the true 3D structure of various semiconductor nanostructures. By this we aim to understand and control their formation during growth and to link their structure to the electro-optic properties that we determine for instance by confocal microscopy. Scanning probe microscopy is furthermore used to explore and manipulate single (magnetic) impurities in a semiconductor material. This work has allowed for a deep understanding of quantum mechanical aspects that determine the properties of a whole range of impurities and defects in semiconductors.

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    Research Output

    Ballistic Phonons in Ultrathin Nanowires

    Vakulov, D., Gireesan, S., Swinkels, M. Y., Chavez, R., Vogelaar, T., Torres, P., Campo, A., De Luca, M., Verheijen, M. A., Koelling, S., Gagliano, L., Haverkort, J. E. M., Alvarez, F. X., Bobbert, P. A., Zardo, I. & Bakkers, E. P. A. M., 8 Apr 2020, In : Nano Letters. 20, 4, p. 2703-2709 7 p.

    Research output: Contribution to journalArticleAcademicpeer-review

    Open Access
    File
  • 2 Downloads (Pure)

    Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

    Fischer, I. A., Clausen, C. J., Schwarz, D., Zaumseil, P., Capellini, G., Virgilio, M., Da Silva Figueira, M. C., Birner, S., Koelling, S., Koenraad, P. M., Huang, M. R. S., Koch, C. T., Wendav, T., Busch, K. & Schulze, J., 19 Feb 2020, In : Physical Review Materials. 4, 2, 10 p., 024601.

    Research output: Contribution to journalArticleAcademicpeer-review

    Open Access
    File
  • 1 Downloads (Pure)

    Direct-bandgap emission from hexagonal Ge and SiGe alloys

    Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., van Tilburg, M., Mao, C., Ren, Y., van Lange, V. T., Korzun, K., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M. & Bakkers, E. P. A. M., Apr 2020, In : Nature. 580, 7802, p. 205–209 5 p.

    Research output: Contribution to journalArticleAcademicpeer-review

  • Press / Media

    Student theses

    (In,Ga)N heterostructures in self-assembled GaN nanowires grown on TiN by molecular beam epitaxy

    Author: Goertz, J. J., 2016

    Supervisor: Koenraad, P. M. (Supervisor 1), Geelhaar, L. (External person) (External coach), Bakkers, E. P. (Supervisor 2), Nijdam, S. (Supervisor 2) & Zijlstra, P. (Supervisor 2)

    Student thesis: Master

    File

    Hydrogen passivation of N:GaAs studied using cross-sectional scanning tunneling microscopy

    Author: Tjeertes, D., 2019

    Supervisor: Krammel, C. M. (Supervisor 1) & Koenraad, P. M. (Supervisor 2)

    Student thesis: Master

    File

    Improving low-voltage integrated power devices: a simulation and experimental based study

    Author: Toonen, J., 2019

    Supervisor: Koenraad, P. M. (Supervisor 1), Mels, A. (External coach) & Huizing, H. (External person) (External coach)

    Student thesis: Master

    File