Plasma-Enhanced Chemical Vapor Deposition (PECVD) reactors

    J.J.M. Sanders (Manager)

Facility/equipment: Equipment

    Description

    Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor based on Inductively Coupled Plasma (ICP) source. It is used for the deposition of Si3N4, SiO2 and a-Si:H. Wafer handling  up to 4”. Equipped with a loadlock chamber.  Automatic pressure control and turbo pump. Process monitoring available with in-situ ellipsometry. Process temperature from 20°C up to 400°C.

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    Pressure control
    Plasma sources
    Process monitoring
    Ellipsometry
    Inductively coupled plasma
    Plasma enhanced chemical vapor deposition
    Pumps
    Temperature
    silicon nitride