Oxford Instruments OpAL

    J.J.M. Sanders (Manager)

Facility/equipment: Equipment

    Description

    Atomic layer deposition (ALD) reactor, both plasma assisted and thermal. Open-load system for up to 200 mm wafers. Equipped with three precursors-inputs. Process monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process. Has been used for instance for ALD of Al2O3, SiO2, ZnO and Al doped ZnO.

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    atomic layer epitaxy
    optical emission spectroscopy
    ellipsometry
    mass spectroscopy
    reactors
    wafers