Atomic layer deposition (ALD) reactor, both plasma assisted and thermal for up to 200 mm wafers. Equipped with a loadlock and three precursors-inputs. Automatic pressure control and turbo pump. Process monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process. Has been used for instance for ALD of 2D-TMDs (two-dimensional transititon metal dichalcogenides) like TuS, MoS and more in the future.